Hafnium oxide non-volatile memories have shown promise as an artificial synapse in neuromorphic computing architectures. However, there is still a need to fundamentally understand how to reliably control the analog resistance change induced by oxygen ions that partially rupture or re-form the conductive filament. In this work, the impact of measurement conditions (pulse amplitude and pulse width) and titanium dopants on the analog resistance change of atomic layer deposited hafnium oxide memristor synapses are studied. A lower pulse amplitude improves the linearity of resistance change as a function of the number of pulses but results in a smaller memory window. The addition of titanium dopants does not substantively change the analog resistance modulation of hafnium oxide. Density functional theory calculations show that titanium strongly impacts oxygen ion motion in the HfxTiyOz matrix but does not impact significantly in the HfTi metallic filament. This study demonstrates that the analog characteristic of HfxTiyOz artificial synapses is largely independent of the titanium doped bulk oxide since the resistance change is primarily controlled by the HfTi metallic conducting filament.
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28 May 2022
Research Article|
May 24 2022
Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses
Fabia F. Athena
;
Fabia F. Athena
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
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Matthew P. West
;
Matthew P. West
2
School of Materials Science and Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
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Pradip Basnet
;
Pradip Basnet
2
School of Materials Science and Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
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Jinho Hah;
Jinho Hah
2
School of Materials Science and Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
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Qi Jiang;
Qi Jiang
2
School of Materials Science and Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
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Wei-Cheng Lee
;
Wei-Cheng Lee
3
Department of Physics, Applied Physics, and Astronomy, Binghamton University
, Binghamton, New York 13902, USA
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Eric M. Vogel
Eric M. Vogel
a)
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
2
School of Materials Science and Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
Fabia F. Athena
1
Matthew P. West
2
Pradip Basnet
2
Jinho Hah
2
Qi Jiang
2
Wei-Cheng Lee
3
Eric M. Vogel
1,2,a)
1
School of Electrical and Computer Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
2
School of Materials Science and Engineering, Georgia Institute of Technology
, Atlanta, Georgia
30332, USA
3
Department of Physics, Applied Physics, and Astronomy, Binghamton University
, Binghamton, New York 13902, USA
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 131, 204901 (2022)
Article history
Received:
January 31 2022
Accepted:
April 30 2022
Citation
Fabia F. Athena, Matthew P. West, Pradip Basnet, Jinho Hah, Qi Jiang, Wei-Cheng Lee, Eric M. Vogel; Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses. J. Appl. Phys. 28 May 2022; 131 (20): 204901. https://doi.org/10.1063/5.0087001
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