Atomistic determination of carrier scattering properties is essential for designing nano-electronic devices in two-dimensional (2D) materials. Traditional quantum scattering theory is developed in an asymptotic limit, thus making it inapplicable for 2D materials and heterostructures. Here, we introduce a new paradigm of non-asymptotic quantum scattering theory to obtain the carrier scattering properties at finite distances from active scattering centers. We develop an atomistic multiscale formalism built on the Hamiltonian, supplemented with parameters from first-principles electronic structure calculations. We apply this framework to investigate electron transport in lateral transition-metal dichalcogenide heterostructures and demonstrate enhanced high mobility of the order of at room temperature. The non-asymptotic quantum scattering formalism provides a new frontier to design high-performance mesoscopic devices in 2D materials.
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