The effects of thermal annealing on the optical properties of Mg-doped cubic zincblende GaN epilayers grown by metalorganic chemical vapor deposition on 3C-SiC/Si (001) substrates are investigated. The photoluminescence spectra show near band edge features and a blue luminescence band that depend on Mg concentration, temperature, and excitation power density. Annealing the sample in a N2 atmosphere causes the intensity of the blue band to increase by a factor of 5. Power dependent photoluminescence measurements show a reduction in the laser excitation density required for saturation of the blue band after annealing, indicating an increase in the recombination lifetime. Time decay measurements confirm this increase, which is attributed to a reduction in the concentration of non-radiative defects after annealing. The results presented here are compared to those reported previously for Mg-doped hexagonal wurtzite GaN.
Skip Nav Destination
,
,
,
,
,
,
,
Article navigation
28 August 2021
Research Article|
August 27 2021
The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers Available to Purchase
D. Dyer
;
D. Dyer
1
Department of Physics and Astronomy and Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
Search for other works by this author on:
S. A. Church
;
S. A. Church
1
Department of Physics and Astronomy and Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
Search for other works by this author on:
M. Jain;
M. Jain
2
Kubos Semiconductors Ltd.
, Future Business Park, Cambridge CB4 2HY, United Kingdom
Search for other works by this author on:
M. J. Kappers;
M. J. Kappers
3
Department of Materials Science and Metallurgy, University of Cambridge
, Cambridge CB3 0FS, United Kingdom
Search for other works by this author on:
M. Frentrup;
M. Frentrup
3
Department of Materials Science and Metallurgy, University of Cambridge
, Cambridge CB3 0FS, United Kingdom
Search for other works by this author on:
D. J. Wallis;
D. J. Wallis
2
Kubos Semiconductors Ltd.
, Future Business Park, Cambridge CB4 2HY, United Kingdom
3
Department of Materials Science and Metallurgy, University of Cambridge
, Cambridge CB3 0FS, United Kingdom
4
Centre for High Frequency Engineering, University of Cardiff
, Cardiff CF24 3AA, United Kingdom
Search for other works by this author on:
R. A. Oliver
;
R. A. Oliver
3
Department of Materials Science and Metallurgy, University of Cambridge
, Cambridge CB3 0FS, United Kingdom
Search for other works by this author on:
D. J. Binks
D. J. Binks
a)
1
Department of Physics and Astronomy and Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
D. Dyer
1
S. A. Church
1
M. Jain
2
M. J. Kappers
3
M. Frentrup
3
D. J. Wallis
2,3,4
R. A. Oliver
3
D. J. Binks
1,a)
1
Department of Physics and Astronomy and Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
2
Kubos Semiconductors Ltd.
, Future Business Park, Cambridge CB4 2HY, United Kingdom
3
Department of Materials Science and Metallurgy, University of Cambridge
, Cambridge CB3 0FS, United Kingdom
4
Centre for High Frequency Engineering, University of Cardiff
, Cardiff CF24 3AA, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 130, 085705 (2021)
Article history
Received:
May 25 2021
Accepted:
August 14 2021
Citation
D. Dyer, S. A. Church, M. Jain, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, D. J. Binks; The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers. J. Appl. Phys. 28 August 2021; 130 (8): 085705. https://doi.org/10.1063/5.0057824
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Related Content
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
J. Appl. Phys. (May 2021)
Multimicroscopy of cross-section zincblende GaN LED heterostructure
J. Appl. Phys. (September 2021)
Alloy segregation at stacking faults in zincblende GaN heterostructures
J. Appl. Phys. (October 2020)
Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers
J. Appl. Phys. (March 2022)
Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
J. Appl. Phys. (May 2018)