Co-implantation of Mg with N has been shown to improve p-type conductivity in Mg-implanted GaN. Achievement of p-type material still requires temperatures beyond the thermodynamic stability of GaN, however. In this study, we present results of implantation and anneal activation of GaN, co-implanted with Mg and N or Mg only by repeated, short thermal cycles of 1350 °C using a high-power gyrotron microwave source with a quasi-gaussian intensity profile. Spatial variations in optical and electrical properties of the resulting films are characterized by photoluminescence and diode I–V and C–V measurements. Resistive Mg/N co-implanted and annealed material shows dominant luminescence of the VN-related green luminescence (GL2) band at 2.37 eV and relatively lower intensity acceptor-related ultraviolet luminescence (UVL) at 3.27 eV. However, a material showing p–n diode behavior shows higher-intensity UVL luminescence and suppression of the GL2 band, permitting observation of the yellow luminescence (YL) present in the as-grown GaN. The YL is attributed to unintentionally introduced CN–ON complexes and is commonly observed in GaN grown by metalorganic chemical vapor deposition but is typically absent in implanted/annealed GaN. Co-implanted material is compared to material implanted only with Mg and annealed under the same conditions, which shows p-type activation, but contains persistent GL2 luminescence post-anneal and lowers maximum hole concentration.
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28 August 2021
Research Article|
August 27 2021
P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing
V. Meyers
;
V. Meyers
a)
1
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 12203, USA
a)Author to whom correspondence should be addressed: [email protected]
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E. Rocco
;
E. Rocco
1
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 12203, USA
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K. Hogan
;
K. Hogan
1
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 12203, USA
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B. McEwen;
B. McEwen
1
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 12203, USA
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M. Shevelev
;
M. Shevelev
2
Gyrotron Technology Inc.
, Bensalem, Pennsylvania 19020, USA
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V. Sklyar
;
V. Sklyar
2
Gyrotron Technology Inc.
, Bensalem, Pennsylvania 19020, USA
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K. Jones;
K. Jones
3
Army Research Laboratory
, Adelphi, Maryland 20783, USA
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M. Derenge
;
M. Derenge
3
Army Research Laboratory
, Adelphi, Maryland 20783, USA
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F. Shahedipour-Sandvik
F. Shahedipour-Sandvik
1
College of Nanoscale Science and Engineering, SUNY Polytechnic Institute
, Albany, New York 12203, USA
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 130, 085704 (2021)
Article history
Received:
March 01 2021
Accepted:
August 14 2021
Citation
V. Meyers, E. Rocco, K. Hogan, B. McEwen, M. Shevelev, V. Sklyar, K. Jones, M. Derenge, F. Shahedipour-Sandvik; P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing. J. Appl. Phys. 28 August 2021; 130 (8): 085704. https://doi.org/10.1063/5.0049101
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