The anticorrelation between quantum efficiency (QE) and electron spin polarization (ESP) from a -doped GaAs activated to negative electron affinity is studied in detail using an ensemble Monte Carlo approach. The photoabsorption, momentum and spin relaxation during transport, and tunneling of electrons through the surface potential barrier are modeled to identify fundamental mechanisms, which limit the efficiency of GaAs spin-polarized electron sources. In particular, we study the response of QE and ESP to various parameters, such as the photoexcitation energy, doping density, and electron affinity level. Our modeling results for various transport and emission characteristics are in good agreement with available experimental data. Our findings show that the behavior of both QE and ESP at room temperature can be fully explained by the bulk relaxation mechanisms and the time that electrons spend in the material before being emitted.
Skip Nav Destination
,
,
,
,
,
,
Article navigation
14 August 2021
Research Article|
August 13 2021
Monte Carlo modeling of spin-polarized photoemission from p-doped bulk GaAs Available to Purchase
Oksana Chubenko
;
Oksana Chubenko
a)
1
Department of Physics, Arizona State University
, Tempe, Arizona 85287, USA
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
Siddharth Karkare
;
Siddharth Karkare
1
Department of Physics, Arizona State University
, Tempe, Arizona 85287, USA
Search for other works by this author on:
Dimitre A. Dimitrov
;
Dimitre A. Dimitrov
2
Los Alamos National Laboratory
, Los Alamos, New Mexico 87545, USA
Search for other works by this author on:
Jai Kwan Bae
;
Jai Kwan Bae
3
Department of Physics, Cornell University
, Ithaca, New York 14853, USA
Search for other works by this author on:
Luca Cultrera
;
Luca Cultrera
3
Department of Physics, Cornell University
, Ithaca, New York 14853, USA
Search for other works by this author on:
Ivan Bazarov;
Ivan Bazarov
3
Department of Physics, Cornell University
, Ithaca, New York 14853, USA
Search for other works by this author on:
Andrei Afanasev
Andrei Afanasev
4
Department of Physics, The George Washington University
, Washington, DC 20052, USA
Search for other works by this author on:
Oksana Chubenko
1,a)
Siddharth Karkare
1
Dimitre A. Dimitrov
2
Jai Kwan Bae
3
Luca Cultrera
3
Ivan Bazarov
3
Andrei Afanasev
4
1
Department of Physics, Arizona State University
, Tempe, Arizona 85287, USA
2
Los Alamos National Laboratory
, Los Alamos, New Mexico 87545, USA
3
Department of Physics, Cornell University
, Ithaca, New York 14853, USA
4
Department of Physics, The George Washington University
, Washington, DC 20052, USA
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 130, 063101 (2021)
Article history
Received:
June 15 2021
Accepted:
July 12 2021
Citation
Oksana Chubenko, Siddharth Karkare, Dimitre A. Dimitrov, Jai Kwan Bae, Luca Cultrera, Ivan Bazarov, Andrei Afanasev; Monte Carlo modeling of spin-polarized photoemission from p-doped bulk GaAs. J. Appl. Phys. 14 August 2021; 130 (6): 063101. https://doi.org/10.1063/5.0060151
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Related Content
Monte Carlo charge transport and photoemission from negative electron affinity GaAs photocathodes
J. Appl. Phys. (March 2013)
Transient work function gating: A new photoemission regime
J. Appl. Phys. (July 2020)
Effect of excessive Cs and O on activation of GaAs(100) surface: From experiment to theory
J. Appl. Phys. (November 2020)
Spin- and angle-resolved inverse photoemission setup with spin orientation independent from electron incidence angle
Rev. Sci. Instrum. (September 2022)
Carrier emission of n-type gallium nitride illuminated by femtosecond laser pulses
J. Appl. Phys. (December 2016)