The anticorrelation between quantum efficiency (QE) and electron spin polarization (ESP) from a -doped GaAs activated to negative electron affinity is studied in detail using an ensemble Monte Carlo approach. The photoabsorption, momentum and spin relaxation during transport, and tunneling of electrons through the surface potential barrier are modeled to identify fundamental mechanisms, which limit the efficiency of GaAs spin-polarized electron sources. In particular, we study the response of QE and ESP to various parameters, such as the photoexcitation energy, doping density, and electron affinity level. Our modeling results for various transport and emission characteristics are in good agreement with available experimental data. Our findings show that the behavior of both QE and ESP at room temperature can be fully explained by the bulk relaxation mechanisms and the time that electrons spend in the material before being emitted.
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14 August 2021
Research Article|
August 13 2021
Monte Carlo modeling of spin-polarized photoemission from p-doped bulk GaAs
Oksana Chubenko
;
Oksana Chubenko
a)
1
Department of Physics, Arizona State University
, Tempe, Arizona 85287, USA
a)Author to whom correspondence should be addressed: chubenko@asu.edu
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Siddharth Karkare
;
Siddharth Karkare
1
Department of Physics, Arizona State University
, Tempe, Arizona 85287, USA
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Dimitre A. Dimitrov
;
Dimitre A. Dimitrov
2
Los Alamos National Laboratory
, Los Alamos, New Mexico 87545, USA
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Jai Kwan Bae
;
Jai Kwan Bae
3
Department of Physics, Cornell University
, Ithaca, New York 14853, USA
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Luca Cultrera
;
Luca Cultrera
3
Department of Physics, Cornell University
, Ithaca, New York 14853, USA
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Ivan Bazarov;
Ivan Bazarov
3
Department of Physics, Cornell University
, Ithaca, New York 14853, USA
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Andrei Afanasev
Andrei Afanasev
4
Department of Physics, The George Washington University
, Washington, DC 20052, USA
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a)Author to whom correspondence should be addressed: chubenko@asu.edu
J. Appl. Phys. 130, 063101 (2021)
Article history
Received:
June 15 2021
Accepted:
July 12 2021
Citation
Oksana Chubenko, Siddharth Karkare, Dimitre A. Dimitrov, Jai Kwan Bae, Luca Cultrera, Ivan Bazarov, Andrei Afanasev; Monte Carlo modeling of spin-polarized photoemission from p-doped bulk GaAs. J. Appl. Phys. 14 August 2021; 130 (6): 063101. https://doi.org/10.1063/5.0060151
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