Despite the ultimate performance of the existing cascade lasers, simple interband emitters in the mid-infrared (IR) can still be of interest as a cheaper and widely tunable alternative for some applications. In this work, we show mid-infrared stimulated emission (SE) at 5–6 μm wavelength from an optically pumped mercury–cadmium–telluride quantum well (QW) heterostructures at temperatures up to 200 K. At lower temperatures, the SE threshold appears to be mostly determined by conventional eeh Auger recombination, while the contribution of alternative QW-specific ehh Auger processes is limited. At higher temperatures, we establish heating of the electron gas by pumping radiation as a primary factor responsible for the thermal quenching of the SE. Consequently, both pumping scheme and QW designs should be carefully revised to minimize carrier heating in order to realize near-to-mid-IR optical converters operating close to ambient temperature. We suggest using low-barrier QWs to minimize excessive heat introduced in the QW upon carrier capture and also to eliminate eeh Auger processes involving excited QW subbands. Thus, mid-infrared HgCdTe lasers are expected to reach operating temperatures readily attainable under thermoelectric cooling.
Skip Nav Destination
Article navigation
7 December 2021
Research Article|
December 02 2021
Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells
K. E. Kudryavtsev
;
K. E. Kudryavtsev
a)
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
2Faculty of Radiophysics,
Lobachevsky University of Nizhny Novgorod
, 603950 Nizhny Novgorod, Russia
a)Author to whom correspondence should be addressed: konstantin@ipmras.ru
Search for other works by this author on:
V. V. Rumyantsev
;
V. V. Rumyantsev
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
Search for other works by this author on:
V. V. Utochkin
;
V. V. Utochkin
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
Search for other works by this author on:
M. A. Fadeev
;
M. A. Fadeev
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
Search for other works by this author on:
V. Ya. Aleshkin
;
V. Ya. Aleshkin
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
Search for other works by this author on:
A. A. Dubinov
;
A. A. Dubinov
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
Search for other works by this author on:
M. S. Zholudev;
M. S. Zholudev
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
Search for other works by this author on:
N. N. Mikhailov;
N. N. Mikhailov
3
Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia
Search for other works by this author on:
S. A. Dvoretskii
;
S. A. Dvoretskii
3
Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia
Search for other works by this author on:
V. G. Remesnik;
V. G. Remesnik
3
Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences
, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia
Search for other works by this author on:
F. Teppe;
F. Teppe
4
Université de Montpellier, Laboratoire Charles Coulumb
, F-34095 Montpellier, France
Search for other works by this author on:
V. I. Gavrilenko
;
V. I. Gavrilenko
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
Search for other works by this author on:
S. V. Morozov
S. V. Morozov
1
Institute for Physics of Microstructures, Russian Academy of Sciences
, 603087 Nizhniy Novgorod, Russia
2Faculty of Radiophysics,
Lobachevsky University of Nizhny Novgorod
, 603950 Nizhny Novgorod, Russia
Search for other works by this author on:
a)Author to whom correspondence should be addressed: konstantin@ipmras.ru
J. Appl. Phys. 130, 214302 (2021)
Article history
Received:
September 17 2021
Accepted:
November 13 2021
Citation
K. E. Kudryavtsev, V. V. Rumyantsev, V. V. Utochkin, M. A. Fadeev, V. Ya. Aleshkin, A. A. Dubinov, M. S. Zholudev, N. N. Mikhailov, S. A. Dvoretskii, V. G. Remesnik, F. Teppe, V. I. Gavrilenko, S. V. Morozov; Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells. J. Appl. Phys. 7 December 2021; 130 (21): 214302. https://doi.org/10.1063/5.0071908
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Machine learning for thermal transport
Ruiqiang Guo, Bing-Yang Cao, et al.
Related Content
Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range
Appl. Phys. Lett. (April 2024)
Whispering gallery mode HgCdTe laser operating near 4 μm under Peltier cooling
Appl. Phys. Lett. (October 2023)
Intraband carrier relaxation in mid-infrared (3–4 μm) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers
J. Appl. Phys. (February 2023)
Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures
Appl. Phys. Lett. (July 2014)
Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures
J. Appl. Phys. (April 2021)