We report on a bistable defect known as M-center, here introduced in n-type 4H-SiC by 2 MeV He ion implantation. Deep levels of the M-center are investigated by means of junction spectroscopy techniques, namely, deep level transient spectroscopy (DLTS) and isothermal DLTS. In addition to previously reported three deep levels arising from the M-center (labeled as M1, M2, and M3), we provide direct evidence on the existence of a fourth transition (labeled as M4) with an activation energy of 0.86 eV. Activation energies and apparent capture cross sections for all four metastable defects are determined. From first-principles calculations, it is shown that the observed features of the M-center, including the charge state character, transition levels, bi-stability dynamics, and annealing, are all accounted for by a carbon self-interstitial.
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28 September 2021
Research Article|
September 28 2021
M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies
Special Collection:
Defects in Semiconductors 2022
I. Capan
;
I. Capan
a)
1
Rudjer Bošković Institute
, Bijenička 54, 10000 Zagreb, Croatia
a)Author to whom correspondence should be addressed: ivana.capan@irb.hr
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T. Brodar
;
T. Brodar
1
Rudjer Bošković Institute
, Bijenička 54, 10000 Zagreb, Croatia
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R. Bernat
;
R. Bernat
1
Rudjer Bošković Institute
, Bijenička 54, 10000 Zagreb, Croatia
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Ž. Pastuović
;
Ž. Pastuović
2
Australian Nuclear Science and Technology Organisation
, 1 New Illawarra Rd., Lucas Heights, NSW 2234, Australia
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T. Makino
;
T. Makino
3
National Institutes for Quantum and Radiological Science and Technology
, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
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T. Ohshima
;
T. Ohshima
3
National Institutes for Quantum and Radiological Science and Technology
, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
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J. D. Gouveia
;
J. D. Gouveia
4
I3N, Department of Physics, University of Aveiro
, Campus Santiago, 3810-193 Aveiro, Portugal
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J. Coutinho
J. Coutinho
4
I3N, Department of Physics, University of Aveiro
, Campus Santiago, 3810-193 Aveiro, Portugal
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a)Author to whom correspondence should be addressed: ivana.capan@irb.hr
Note: This paper is part of the Special Topic on Defects in Semiconductors.
J. Appl. Phys. 130, 125703 (2021)
Article history
Received:
July 28 2021
Accepted:
September 10 2021
Citation
I. Capan, T. Brodar, R. Bernat, Ž. Pastuović, T. Makino, T. Ohshima, J. D. Gouveia, J. Coutinho; M-center in 4H-SiC: Isothermal DLTS and first principles modeling studies. J. Appl. Phys. 28 September 2021; 130 (12): 125703. https://doi.org/10.1063/5.0064958
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