This work demonstrates the synthesis of fcc-Co derived from an isostructural phase. When deposited at high substrate temperature () or thermal annealing () above 573 K, the out-diffusion of N from fcc- occurs, leaving behind a high purity fcc-Co phase. Generally, Co grows in a hcp structure, and a hcp to fcc-Co transformation can be facilitated at high temperature or pressure. The proposed route by nitridation and diffusion of N not only brings down the transition temperature but an impurity present in the form of hcp-Co can be avoided altogether as well. Oriented (111) thin films were grown using a CrN(111) template on a quartz substrate using dc magnetron sputtering. Samples were grown at different or room temperature grown samples were annealed at different . Analysis using x-ray diffraction, N K-edge x-ray absorption, x-ray photoelectron, and secondary ion mass spectroscopy confirmed the formation of fcc- or fcc-Co phases. Furthermore, it was found that Co–N bonding and N concentration get significantly reduced at high or due to exceptionally high N self-diffusion taking place in . Magnetic measurements using ex situ and in situ magneto-optical Kerr effect showed differences in saturation behavior and coercivity of and fcc-Co samples. By combining structural, electronic, and magnetization measurements, it has been observed that a high purity fcc-Co can be conveniently derived from the isostructural aided by an exceptionally high N self-diffusion in .
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Research Article| September 28 2021
Synthesis of fcc-Co from isostructural Co4N
Dileep Kumar ;
U. P. Deshpande ;
Seema, Dileep Kumar, U. P. Deshpande, Mukul Gupta; Synthesis of fcc-Co from isostructural Co4N. J. Appl. Phys. 28 September 2021; 130 (12): 125106. https://doi.org/10.1063/5.0059196
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