Here we report magnetotransport properties of (BSTS), In- and Sn-doped BSTS single crystals, grown through modified Bridgeman technique. In- and Sn-doped BSTS single crystals show bulk insulation in temperature dependency resistivity measurements and are confirmed from the observed impurity band mediated three dimensional variable-range hopping behavior at low temperatures over virgin BSTS with metallic bulk. Magnetotransport measurements for BSTS and Sn-doped BSTS reveal a zero field sharp positive cusp and is identified as two dimensional (2D) weak antilocalization (WAL) effect, which is the consequence of Berry phase of the carriers. For In-doped BSTS single crystals, crossover is identified from WAL to weak localization with field variation at low temperatures and also with an increase in temperature from 2 K. For all the single crystals, phase coherence lengths () are determined by fitting low field magnetotransport data with Hikami–Larkin–Nagaoka equation. Temperature dependency of phase coherence lengths is described with 2D electron–electron (–) and 2D electron–phonon (–) interactions for virgin and In-doped BSTS single crystals while for Sn-doped BSTS specimen follows power law.
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7 March 2021
Research Article|
March 02 2021
Observation of 2D transport in Sn- and In-doped Bi2−xSbxTe3−ySey topological insulator
Special Collection:
Topological Materials and Devices
Priyanath Mal
;
Priyanath Mal
1
Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya
, Koni, Bilaspur 495009, Chhattisgarh, India
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Bipul Das;
2
Department of Physics, National Changhua University of Education
, Jin-De Road, Changhua 500, Taiwan
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G. Bera;
G. Bera
1
Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya
, Koni, Bilaspur 495009, Chhattisgarh, India
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P. Rambabu;
P. Rambabu
1
Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya
, Koni, Bilaspur 495009, Chhattisgarh, India
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G. R. Turpu
;
G. R. Turpu
1
Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya
, Koni, Bilaspur 495009, Chhattisgarh, India
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C. V. Tomy;
C. V. Tomy
3
Department of Physics, Indian Institute of Technology Bombay
, Powai, Mumbai 400076, India
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Pradip Das
Pradip Das
a)
1
Department of Pure and Applied Physics, Guru Ghasidas Vishwavidyalaya
, Koni, Bilaspur 495009, Chhattisgarh, India
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b)
Present address: Institute of Physics, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 11529, Taiwan.
Note: This paper is part of the Special Topic on Topological Materials and Devices.
J. Appl. Phys. 129, 095702 (2021)
Article history
Received:
October 30 2020
Accepted:
February 04 2021
Citation
Priyanath Mal, Bipul Das, G. Bera, P. Rambabu, G. R. Turpu, C. V. Tomy, Pradip Das; Observation of 2D transport in Sn- and In-doped Bi2−xSbxTe3−ySey topological insulator. J. Appl. Phys. 7 March 2021; 129 (9): 095702. https://doi.org/10.1063/5.0035692
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