We present a combined experimental and numerical investigation of phonon transport in multiphase nanostructured silicon. The sample was synthesized by high-pressure torsion with a nominal pressure of 24 GPa. Based on the x-ray diffraction measurement, we have identified the existence of three phases of silicon in the sample: Si-I, Si-III, and Si-XII, with volume fractions of 66%, 25%, and 9% and average grain sizes of 25, 14, and 11 nm, respectively. The measured thermal conductivities of the sample in the temperature range of 150–330 K are on the order of 5 W/(m K) and exhibit weak temperature dependence. A multiscale modeling that incorporates first-principles lattice dynamics, the Monte Carlo ray-tracing method, and effective medium theory was used to understand the mechanism of phonon transport in multiphase nanostructured silicon as well as the weak temperature dependence. We found that the thermal conductivity of single-phase nanostructured silicon decreases with decreasing average grain size and is about an order of magnitude lower than the corresponding bulk counterpart when the average grain size is . The weak temperature-dependent thermal conductivity in the nanostructured silicon is attributed to the strong elastic phonon–boundary scattering at the grain boundary. The thermal conductivity predicted from the multiscale modeling matches reasonably well with the measurement. This work provides insights into phonon transport in multiphase nanostructured materials and suggests that the effective thermal conductivity of nanostructured silicon from high-pressure torsion can be further reduced by increasing the volume fractions of the Si-III and Si-XII phases.
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28 February 2021
Research Article|
February 23 2021
Phonon transport in multiphase nanostructured silicon fabricated by high-pressure torsion
Cheng Shao
;
Cheng Shao
1
Department of Mechanical Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
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Kensuke Matsuda;
Kensuke Matsuda
2
Department of Mechanical Engineering, Kyushu University
, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Shenghong Ju;
Shenghong Ju
1
Department of Mechanical Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
3
China-UK Low Carbon College, Shanghai Jiao Tong University
, No. 3 Yinlian Road, Lingang, Shanghai 201306, China
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Yoshifumi Ikoma
;
Yoshifumi Ikoma
4
Department of Materials Science and Engineering, Kyushu University
, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Masamichi Kohno
;
Masamichi Kohno
2
Department of Mechanical Engineering, Kyushu University
, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
5
International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University
, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan
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Junichiro Shiomi
Junichiro Shiomi
a)
1
Department of Mechanical Engineering, The University of Tokyo
, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
a)Author to whom correspondence should be addressed: shiomi@photon.t.u-tokyo.ac.jp
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a)Author to whom correspondence should be addressed: shiomi@photon.t.u-tokyo.ac.jp
J. Appl. Phys. 129, 085101 (2021)
Article history
Received:
November 16 2020
Accepted:
February 04 2021
Citation
Cheng Shao, Kensuke Matsuda, Shenghong Ju, Yoshifumi Ikoma, Masamichi Kohno, Junichiro Shiomi; Phonon transport in multiphase nanostructured silicon fabricated by high-pressure torsion. J. Appl. Phys. 28 February 2021; 129 (8): 085101. https://doi.org/10.1063/5.0037775
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