We report the band structure of Ba-deficient BaTiO3 as a p-type semiconductor, studied by a combination of light reflectance and photoelectron yield spectroscopy. Two acceptor levels were observed at the tail of a valence band. As the quantity of Ba vacancies increased, the density of state of the two acceptor levels also increased. The levels of the conduction band minimum and the valence band maximum shifted far away from the vacuum level, but the bandgap seems to be independent of Ba deficient concentration. For classical semiconductors such as Si and GaAs, the observation of impurity levels is restricted to low temperatures (∼20 K) owing to their narrow bandgaps. Oxide semiconductors have now been demonstrated with wide bandgaps and acceptor levels, at normal operating temperatures, which could lead to new device designs in the future.
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28 February 2021
Research Article|
February 25 2021
Light reflectance and photoelectron yield spectroscopy enable acceptor level measurement in p-type Ba1−xTiO3 semiconductor
Saya Fujii;
Saya Fujii
1
Graduate School of Natural Science and Technology, Okayama University
, Okayama 700-8530, Japan
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Jun Kano
;
Jun Kano
a)
1
Graduate School of Natural Science and Technology, Okayama University
, Okayama 700-8530, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Norihiro Oshime
;
Norihiro Oshime
2
Synchrotron Radiation Research Center, Kansai Photon Science Institute, Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology (QST)
, SPring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan
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Tohru Higuchi;
Tohru Higuchi
3
Department of Applied Physics, Tokyo University of Science
, Katsushika, Tokyo 125-8585, Japan
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Yuta Nishina;
Yuta Nishina
1
Graduate School of Natural Science and Technology, Okayama University
, Okayama 700-8530, Japan
4
Research Core for Interdisciplinary Sciences, Okayama University
, Okayama, 700-8530, Japan
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Tatsuo Fujii
;
Tatsuo Fujii
1
Graduate School of Natural Science and Technology, Okayama University
, Okayama 700-8530, Japan
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Naoshi Ikeda;
Naoshi Ikeda
1
Graduate School of Natural Science and Technology, Okayama University
, Okayama 700-8530, Japan
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Hiromi Ota
Hiromi Ota
5
Advanced Science Research Center, Okayama University
, Okayama 700-8530, Japan
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 129, 084105 (2021)
Article history
Received:
October 21 2020
Accepted:
February 06 2021
Citation
Saya Fujii, Jun Kano, Norihiro Oshime, Tohru Higuchi, Yuta Nishina, Tatsuo Fujii, Naoshi Ikeda, Hiromi Ota; Light reflectance and photoelectron yield spectroscopy enable acceptor level measurement in p-type Ba1−xTiO3 semiconductor. J. Appl. Phys. 28 February 2021; 129 (8): 084105. https://doi.org/10.1063/5.0033761
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