Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than the wurtzite, crystal phase has the potential to improve efficiency. However, optimization of the emission efficiency of these heterostructures is still required to compete with more conventional alternatives. Photoluminescence time decays were used to assess how the quantum well width and number of quantum wells affect the recombination rates, and temperature dependent photoluminescence was used to determine the factors affecting recombination efficiency. The radiative recombination lifetime was found to be approximately 600 ps and to increase weakly with well width, consistent with a change in the exciton binding energy. The relative efficiency at room temperature was found to increase by a factor of five when the number of wells was increased from one to five. Furthermore, the efficiency increased by factor 2.2 when the width was increased from 2.5 to 7.5 nm. These results indicate that thermionic emission is the most important process reducing efficiency at temperatures in excess of 100 K. Moreover, the weak dependence of the rate of radiative recombination on well width means that increasing well thickness is an effective way of suppressing thermionic emission and thereby increasing efficiency in zincblende InGaN/GaN quantum wells, in contrast to those grown in the wurtzite phase.
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7 May 2021
Research Article|
May 06 2021
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
S. A. Church
;
S. A. Church
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
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M. Quinn
;
M. Quinn
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
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K. Cooley-Greene;
K. Cooley-Greene
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
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B. Ding
;
B. Ding
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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A. Gundimeda
;
A. Gundimeda
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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M. J. Kappers;
M. J. Kappers
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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M. Frentrup;
M. Frentrup
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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D. J. Wallis
;
D. J. Wallis
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
3
Centre for High Frequency Engineering, University of Cardiff
, 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom
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R. A. Oliver
;
R. A. Oliver
2
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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D. J. Binks
D. J. Binks
a)
1
Department of Physics and Astronomy, Photon Science Institute, University of Manchester
, Manchester M13 9PL, United Kingdom
a)Author to whom correspondence should be addressed: david.binks@manchester.ac.uk
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a)Author to whom correspondence should be addressed: david.binks@manchester.ac.uk
J. Appl. Phys. 129, 175702 (2021)
Article history
Received:
February 05 2021
Accepted:
April 12 2021
Citation
S. A. Church, M. Quinn, K. Cooley-Greene, B. Ding, A. Gundimeda, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, D. J. Binks; Photoluminescence efficiency of zincblende InGaN/GaN quantum wells. J. Appl. Phys. 7 May 2021; 129 (17): 175702. https://doi.org/10.1063/5.0046649
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