Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than the wurtzite, crystal phase has the potential to improve efficiency. However, optimization of the emission efficiency of these heterostructures is still required to compete with more conventional alternatives. Photoluminescence time decays were used to assess how the quantum well width and number of quantum wells affect the recombination rates, and temperature dependent photoluminescence was used to determine the factors affecting recombination efficiency. The radiative recombination lifetime was found to be approximately 600 ps and to increase weakly with well width, consistent with a change in the exciton binding energy. The relative efficiency at room temperature was found to increase by a factor of five when the number of wells was increased from one to five. Furthermore, the efficiency increased by factor 2.2 when the width was increased from 2.5 to 7.5 nm. These results indicate that thermionic emission is the most important process reducing efficiency at temperatures in excess of 100 K. Moreover, the weak dependence of the rate of radiative recombination on well width means that increasing well thickness is an effective way of suppressing thermionic emission and thereby increasing efficiency in zincblende InGaN/GaN quantum wells, in contrast to those grown in the wurtzite phase.
Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
S. A. Church, M. Quinn, K. Cooley-Greene, B. Ding, A. Gundimeda, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, D. J. Binks; Photoluminescence efficiency of zincblende InGaN/GaN quantum wells. J. Appl. Phys. 7 May 2021; 129 (17): 175702. https://doi.org/10.1063/5.0046649
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