The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polarization switching kinetics is essential for both scientific and technological purposes. Polarization switching is analyzed based on the nucleation-limited switching model with a Lorentzian distribution of logarithmic switching times. The activation field governing the switching kinetics is explained by a dependence on the density of oxygen vacancies, which are caused by various annealing temperatures. This indicates that oxygen vacancies can be a dominant factor in the polarization switching of Si-doped HfO2 films.
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28 April 2021
Research Article|
April 26 2021
Effect of annealing temperature on switching properties in Si-doped HfO2 films
Special Collection:
Domains and Domain Walls in Ferroic Materials
Sanghyun Park
;
Sanghyun Park
1
Department of Applied Physics, Hanyang University
, Ansan, Gyeonggi-do 15588, Republic of Korea
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Min Chul Chun;
Min Chul Chun
1
Department of Applied Physics, Hanyang University
, Ansan, Gyeonggi-do 15588, Republic of Korea
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Min Jin Kim;
Min Jin Kim
1
Department of Applied Physics, Hanyang University
, Ansan, Gyeonggi-do 15588, Republic of Korea
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Jun Young Lee;
Jun Young Lee
2
School of Materials Science and Engineering, Gwangju Institute of Science and Technology
, Gwangju 61005, Republic of Korea
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Yongjun Cho;
Yongjun Cho
1
Department of Applied Physics, Hanyang University
, Ansan, Gyeonggi-do 15588, Republic of Korea
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Cheoljun Kim;
Cheoljun Kim
3
Department of Applied Physics, Center for Bionano Intelligence Education and Research, Hanyang University
, Ansan, Gyeonggi-do 15588, Republic of Korea
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Ji Young Jo
;
Ji Young Jo
2
School of Materials Science and Engineering, Gwangju Institute of Science and Technology
, Gwangju 61005, Republic of Korea
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Bo Soo Kang
Bo Soo Kang
a)
1
Department of Applied Physics, Hanyang University
, Ansan, Gyeonggi-do 15588, Republic of Korea
a)Author to whom correspondence should be addressed: bosookang@hanyang.ac.kr
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a)Author to whom correspondence should be addressed: bosookang@hanyang.ac.kr
Note: This paper is part of the Special Topic on Domains and Domain Walls in Ferroic Materials.
J. Appl. Phys. 129, 164101 (2021)
Article history
Received:
December 03 2020
Accepted:
March 31 2021
Citation
Sanghyun Park, Min Chul Chun, Min Jin Kim, Jun Young Lee, Yongjun Cho, Cheoljun Kim, Ji Young Jo, Bo Soo Kang; Effect of annealing temperature on switching properties in Si-doped HfO2 films. J. Appl. Phys. 28 April 2021; 129 (16): 164101. https://doi.org/10.1063/5.0039446
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