The discovery of hafnium oxide-based ferroelectrics has resulted in the pursuit of ferroelectric field-effect transistors with higher scalability, lower power consumption, and enhanced switching speed. An in-depth understanding of ferroelectric polarization switching kinetics is essential for both scientific and technological purposes. Polarization switching is analyzed based on the nucleation-limited switching model with a Lorentzian distribution of logarithmic switching times. The activation field governing the switching kinetics is explained by a dependence on the density of oxygen vacancies, which are caused by various annealing temperatures. This indicates that oxygen vacancies can be a dominant factor in the polarization switching of Si-doped HfO2 films.
Effect of annealing temperature on switching properties in Si-doped HfO2 films
Note: This paper is part of the Special Topic on Domains and Domain Walls in Ferroic Materials.
Sanghyun Park, Min Chul Chun, Min Jin Kim, Jun Young Lee, Yongjun Cho, Cheoljun Kim, Ji Young Jo, Bo Soo Kang; Effect of annealing temperature on switching properties in Si-doped HfO2 films. J. Appl. Phys. 28 April 2021; 129 (16): 164101. https://doi.org/10.1063/5.0039446
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