Hole transport materials are crucial for efficient charge extraction in perovskite solar cells to achieve high power conversion efficiency and stability. Herein, the hole transport properties of the 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)9,9′-spirobifluorene (spiro-OMeTAD) thin films with a dopant lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) are investigated through impedance spectroscopy. Upon doping, we observe a dispersive hole transport with nearly a 100-fold increase in the hole mobility compared with the pristine spiro-OMeTAD films. The hole mobilities slightly decrease with increasing electric fields for both films, exhibiting a negative electric field dependence of mobility due to the positional disorder. Subsequently, the charge carrier density of the LiTFSI-doped spiro-OMeTAD film is three orders of magnitude higher than that of the pristine film. The LiTFSI dopant induces two different electrical regions in the doped thin film, which can be reflected through impedance spectroscopy. The presented investigation through impedance spectroscopy is of high practical interest for the development of hole transport materials and the optimization of the transport layer doping in perovskite solar cells.
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28 August 2020
Research Article|
August 26 2020
Insights into the hole transport properties of LiTFSI-doped spiro-OMeTAD films through impedance spectroscopy
Special Collection:
Hybrid Organic-Inorganic Halide Perovskites
Bixin Li
;
Bixin Li
1
Department of Science Education, Laboratory of College Physics, Hunan First Normal University
, Changsha 410205, China
2
Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU)
, Xi'an 710072, Shaanxi, China
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Shiyang Zhang;
Shiyang Zhang
1
Department of Science Education, Laboratory of College Physics, Hunan First Normal University
, Changsha 410205, China
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Fei Xia;
Fei Xia
3
Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
, Nanjing 211816, Jiangsu, China
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Yongliang Huang;
Yongliang Huang
1
Department of Science Education, Laboratory of College Physics, Hunan First Normal University
, Changsha 410205, China
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Xueqin Ran;
Xueqin Ran
3
Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
, Nanjing 211816, Jiangsu, China
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Yingdong Xia;
Yingdong Xia
a)
3
Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
, Nanjing 211816, Jiangsu, China
a)Authors to whom correspondence should be addressed: iamydxia@njtech.edu.cn and iamyhchen@njtech.edu.cn
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Yonghua Chen
;
Yonghua Chen
a)
2
Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU)
, Xi'an 710072, Shaanxi, China
3
Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
, Nanjing 211816, Jiangsu, China
a)Authors to whom correspondence should be addressed: iamydxia@njtech.edu.cn and iamyhchen@njtech.edu.cn
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Wei Huang
Wei Huang
2
Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU)
, Xi'an 710072, Shaanxi, China
3
Key Laboratory of Flexible Electronics (KLOFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech)
, Nanjing 211816, Jiangsu, China
4
Key Laboratory for Organic Electronics and Information Displays (KLOEID), and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications
, Nanjing 210023, Jiangsu, China
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a)Authors to whom correspondence should be addressed: iamydxia@njtech.edu.cn and iamyhchen@njtech.edu.cn
Note: This paper is part of the special collection on Hybrid Organic-Inorganic Halide Perovskites
J. Appl. Phys. 128, 085501 (2020)
Article history
Received:
April 27 2020
Accepted:
August 14 2020
Citation
Bixin Li, Shiyang Zhang, Fei Xia, Yongliang Huang, Xueqin Ran, Yingdong Xia, Yonghua Chen, Wei Huang; Insights into the hole transport properties of LiTFSI-doped spiro-OMeTAD films through impedance spectroscopy. J. Appl. Phys. 28 August 2020; 128 (8): 085501. https://doi.org/10.1063/5.0011868
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