Semiconductor nanoparticles (NPs) are attractive for use as the constituent blocks of artificial solids. Furthermore, the layer-by-layer (LbL) method allows one to accurately arrange and stack NPs and is being explored widely for the fundamental research and development of artificial solids and devices based on NPs. In this study, we determined the absolute values of the dielectric function of monolayered semiconductor NPs deposited by the LbL method. The aim was to measure the structural parameters, such as the thickness, NP volume density, and NP number density, of the monolayered films composed of NPs. A novel fully optical method based on spectroscopic ellipsometry was used to evaluate thin films composed of monolayered CdS NPs deposited by the LbL method. We could successfully determine the absolute values of the dielectric function of the CdS NPs deposited as monolayered films based on the above-listed parameters with accuracy. Thus, the optical constants of monolayered semiconductor NPs as well as their structural information could be obtained successfully using the proposed method, which is highly suited for nondestructively determining the parameters of thin films, including those of semiconductor NPs.

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