In this work, we investigate the effect of different chemical treatments, such as solvents, bases, and acids, on the surface properties and electrical behavior of Schottky diodes fabricated on metalorganic chemical vapor deposition-grown, n-type, N-polar GaN. The I–V and C–V barrier heights of the as-grown Schottky diodes are found to be 0.40 eV and 0.60 eV, respectively, with an ideality factor n = 1.07. It is found that the solvent treatments neither change the surface nor the electrical performance of the Schottky diodes, as expected. However, the treatments by the alkaline photolithography developer and acid—the latter of which is often used to clean the surface of Ga-polar GaN films prior to metal contact deposition—degrade the performance of N-polar GaN. These base and acid treatments severely roughen the surface by creating triangular/hexagonal crystallographic facets. The I–V and C–V barrier heights of these base- and acid-treated diodes are increased to 0.63 eV and 1.00 eV, respectively, with ideality factor values n < 1.2. X-ray photoelectron spectroscopy studies indicate that base- and acid-treated surfaces have lower oxygen content as compared to the as-grown sample surface. It is understood that the increment in the barrier height for base- and acid-treated diodes could be due to the change in polarity, from N-polar to semi-polar/non-polar, on these crystallographic features. All these results demonstrate that, unlike for Ga-polar GaN, the N-polar GaN surface is highly reactive to bases and acids.
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14 August 2020
Research Article|
August 11 2020
Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN
Dolar Khachariya
;
Dolar Khachariya
1
Department of Electrical and Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7911, USA
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Dennis Szymanski
;
Dennis Szymanski
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Rohan Sengupta;
Rohan Sengupta
1
Department of Electrical and Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7911, USA
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Pramod Reddy
;
Pramod Reddy
3
Adroit Materials, Inc.
, 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
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Erhard Kohn;
Erhard Kohn
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Zlatko Sitar
;
Zlatko Sitar
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
3
Adroit Materials, Inc.
, 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
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Ramón Collazo;
Ramón Collazo
2
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
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Spyridon Pavlidis
Spyridon Pavlidis
a)
1
Department of Electrical and Computer Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7911, USA
a)Author to whom correspondence should be addressed: [email protected]
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 128, 064501 (2020)
Article history
Received:
May 25 2020
Accepted:
July 25 2020
Citation
Dolar Khachariya, Dennis Szymanski, Rohan Sengupta, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis; Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN. J. Appl. Phys. 14 August 2020; 128 (6): 064501. https://doi.org/10.1063/5.0015140
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