Rare earth ions hosted in solids are good candidates for quantum technologies due to their chemical stability and optical and spin transitions exhibiting long coherence lifetimes. While bulk oxide crystals are usually the preferred host material, the development of a scalable silicon-compatible thin film platform would be desirable. In this paper, we report on the growth of Y2(1−x)Eu2xO3 thin films on silicon in the full range of Eu3+ concentration by direct liquid injection chemical vapor deposition (CVD). Our sub-micrometer polycrystalline films with a strong-(111) texture were grown for all compositions into the bixbyite cubic phase. The variation of growth rates with temperature and flow indicated that deposition occurred through a mass-transport controlled regime. Optical assessment of the Eu-doped thin films showed inhomogeneous linewidths as narrow as 50 GHz and fluorescence lifetimes of 1 ms for the lowest concentrations. Finally, a spectral hole was successfully burned in a 200 nm-thin film with a 2% Eu doping leading to a homogeneous linewidth of 11 MHz. These values are still below those reported for bulk single crystals indicating that additional decoherence mechanisms exist in such nanometric films, which might be alleviated by further improvement of the crystalline quality. Nevertheless, these results pave the way to the use of CVD-grown Eu:Y2O3 thin films as a platform for integrated quantum devices.
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7 August 2020
Research Article|
August 04 2020
Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies
Special Collection:
Materials for Quantum Technologies: Computing, Information, and Sensing
Nao Harada
;
Nao Harada
a)
1
Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris
, Paris 75005, France
a)Author to whom correspondence should be addressed: nao.harada@chimieparistech.psl.eu
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Alban Ferrier
;
Alban Ferrier
1
Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris
, Paris 75005, France
2
Faculté des Sciences et Ingénierie, Sorbonne Universités,
UFR 933, Paris 75005, France
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Diana Serrano
;
Diana Serrano
1
Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris
, Paris 75005, France
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Mauro Persechino;
Mauro Persechino
1
Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris
, Paris 75005, France
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Emrick Briand;
Emrick Briand
3
INSP, Sorbonne Universités
, UPMC Université Paris 6, CNRS, UMR 7588, Paris, France
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Romain Bachelet
;
Romain Bachelet
4
INL, Université de Lyon, Ecole Centrale de Lyon
, CNRS UMR 5270, 69134 Ecully, France
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Ian Vickridge
;
Ian Vickridge
3
INSP, Sorbonne Universités
, UPMC Université Paris 6, CNRS, UMR 7588, Paris, France
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Jean-Jacques Ganem;
Jean-Jacques Ganem
3
INSP, Sorbonne Universités
, UPMC Université Paris 6, CNRS, UMR 7588, Paris, France
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Philippe Goldner;
Philippe Goldner
1
Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris
, Paris 75005, France
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Alexandre Tallaire
Alexandre Tallaire
1
Chimie ParisTech, PSL University, CNRS, Institut de Recherche de Chimie Paris
, Paris 75005, France
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a)Author to whom correspondence should be addressed: nao.harada@chimieparistech.psl.eu
Note: This paper is part of the special collection on Materials for Quantum Technologies: Computing, Information, and Sensing.
J. Appl. Phys. 128, 055304 (2020)
Article history
Received:
April 16 2020
Accepted:
July 15 2020
Citation
Nao Harada, Alban Ferrier, Diana Serrano, Mauro Persechino, Emrick Briand, Romain Bachelet, Ian Vickridge, Jean-Jacques Ganem, Philippe Goldner, Alexandre Tallaire; Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies. J. Appl. Phys. 7 August 2020; 128 (5): 055304. https://doi.org/10.1063/5.0010833
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