Metal-to-insulator transition (MIT) behaviors accompanied by a rapidly reversible phase transition in vanadium dioxide (VO2) have gained much attention from researchers. In this research, lattice-mismatched epitaxial films of VO2 (210) on MgF2 (111) substrates exhibited different phase-transition temperatures and developed a phase regulation of misfit dislocations. It reveals an “effective phase-transition regulation” for VO2 films with different thicknesses in certain substrates—MgF2. It is speculated that the dislocation density could progressively increase with the increasing thickness of the film, and the dislocation spacing distribution tends to become narrower. When the thickness of the film is close to a certain thickness, the misfit dislocation density is close to saturation for full relaxation. The misfit dislocation arrangement produces hysteresis loops of different widths upon resistance and transmittance: when the width of the transmittance hysteresis loop is narrow at 3.9 °C, and the resistance hysteresis loop can reach the largest width at 14.0 °C. Further research about the hysteresis with other substrates and the thickness-dependent transition temperature showed that the variance of hysteresis properties during the phase transition can be ascribed to the different strain states along the V–V chains and the change of the hybrid t2g-orbital occupancy. In addition, critical thickness along the growth direction is also discussed, which could be identified by the experimental results. This research provides a comprehensive understanding of the strain effect on phase-transition behaviors and also could be a guidance for some potential applications in optoelectronic devices.
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28 July 2020
Research Article|
July 23 2020
Controllable phase-transition temperature upon strain release in VO2/MgF2 epitaxial films
Special Collection:
Phase-Change Materials: Syntheses, Fundamentals, and Applications
Zewei Shao;
Zewei Shao
1
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, Dingxi 1295, Changning, Shanghai 200050, China
2Department of Materials Science and Engineering,
University of Chinese Academy of Sciences
, Beijing 100049, China
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Lulu Wang
;
Lulu Wang
1
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, Dingxi 1295, Changning, Shanghai 200050, China
2Department of Materials Science and Engineering,
University of Chinese Academy of Sciences
, Beijing 100049, China
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Tianci Chang;
Tianci Chang
1
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, Dingxi 1295, Changning, Shanghai 200050, China
2Department of Materials Science and Engineering,
University of Chinese Academy of Sciences
, Beijing 100049, China
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Fang Xu;
Fang Xu
1
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, Dingxi 1295, Changning, Shanghai 200050, China
2Department of Materials Science and Engineering,
University of Chinese Academy of Sciences
, Beijing 100049, China
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Guangyao Sun;
Guangyao Sun
1
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, Dingxi 1295, Changning, Shanghai 200050, China
2Department of Materials Science and Engineering,
University of Chinese Academy of Sciences
, Beijing 100049, China
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Ping Jin;
Ping Jin
a)
1
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, Dingxi 1295, Changning, Shanghai 200050, China
3
Materials Research Institute for Sustainable Development, National Institute of Advanced Industrial Science and Technology
, Nagoya 463-8560, Japan
a)Authors to whom correspondence should be addressed: cxun@mail.sic.ac.cn, Tel.: +86 21 6990 6208 and p-jin@mail.sic.ac.cn, Tel.: +86 21 6990 6206
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Xun Cao
Xun Cao
a)
1
State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences
, Dingxi 1295, Changning, Shanghai 200050, China
a)Authors to whom correspondence should be addressed: cxun@mail.sic.ac.cn, Tel.: +86 21 6990 6208 and p-jin@mail.sic.ac.cn, Tel.: +86 21 6990 6206
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a)Authors to whom correspondence should be addressed: cxun@mail.sic.ac.cn, Tel.: +86 21 6990 6208 and p-jin@mail.sic.ac.cn, Tel.: +86 21 6990 6206
Note: This paper is part of the Special Topic on Phase-Change Materials: Syntheses, Fundamentals, and Applications.
J. Appl. Phys. 128, 045303 (2020)
Article history
Received:
April 21 2020
Accepted:
July 05 2020
Citation
Zewei Shao, Lulu Wang, Tianci Chang, Fang Xu, Guangyao Sun, Ping Jin, Xun Cao; Controllable phase-transition temperature upon strain release in VO2/MgF2 epitaxial films. J. Appl. Phys. 28 July 2020; 128 (4): 045303. https://doi.org/10.1063/5.0011423
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