We report magnetoresistance measurements on epitaxial films of the intrinsic ferromagnetic semiconductor GdN electron doped with 1020cm3 to 1021cm3. The magnetoresistance across the temperature range of 10–300 K is dominated by a reduction of spin-disorder scattering in the presence of a magnetic field, imposing a resistance reduction of 27% in a field of 8 T. We show that the magnetoresistance closely follows the magnetic disorder as signaled by the departure of the magnetization from its fully saturated value Ms of 7μB/Gd3+.

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