Magnetoresistance of epitaxial GdN films

We report magnetoresistance measurements on epitaxial films of the intrinsic ferromagnetic semiconductor GdN electron doped with $∼1020cm−3$ to $∼1021cm−3$⁠. The magnetoresistance across the temperature range of 10–300 K is dominated by a reduction of spin-disorder scattering in the presence of a magnetic field, imposing a resistance reduction of 27% in a field of 8 T. We show that the magnetoresistance closely follows the magnetic disorder as signaled by the departure of the magnetization from its fully saturated value $Ms$ of $7μB/Gd3+$⁠.