Homoepitaxial growth of -GaO using metalorganic vapor-phase epitaxy (MOVPE) on several different crystal orientations has previously been studied, but growth on the plane has remained comparatively unexplored. To investigate this, we grew Si-doped and unintentionally doped (UID) homoepitaxial layers simultaneously on Sn-doped and substrates under conditions optimized for growth. We report herein on results from current–voltage and capacitance–voltage (IV and CV) and deep level transient spectroscopy (DLTS) characterization of Schottky diodes fabricated on these samples. Devices on display nearly ideal Schottky diode JV and CV behaviors while for evidence of complete depletion of 2 m thickness, UID epilayers are observed. The UID diodes exhibited Mott–Gurney space charge-limited transport and were completely depleted even at zero bias. Doping samples heavily with Si was sufficient to overcome background compensation and reproduce near-ideal diode behavior. DLTS data from these doped devices show, in addition to typical negative majority-carrier transients, positive transients with a broad energy distribution, possibly indicating traps on structural defects or surface states. An etch pit analysis under SEM revealed intricate structures of the grown layers. Cross-sectional TEM characterization of a sample revealed a high density of structural defects within the epitaxial layer, likely stacking faults. Hypotheses for the origins of the compensation in -GaO homoepitaxial MOVPE growth under growth conditions are discussed; the most likely explanation is the presence of defect states introduced by the stacking faults visible under TEM.
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21 November 2020
Research Article|
November 20 2020
Compensation in homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy
Brian A. Eisner
;
Brian A. Eisner
a)
1
Department of Materials Science and Engineering, University of Utah
, Salt Lake City, Utah 84112, USA
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Praneeth Ranga
;
Praneeth Ranga
2
Department of Electrical and Computer Engineering, University of Utah
, Salt Lake City, Utah 84112, USA
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Arkka Bhattacharyya
;
Arkka Bhattacharyya
2
Department of Electrical and Computer Engineering, University of Utah
, Salt Lake City, Utah 84112, USA
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Sriram Krishnamoorthy
;
Sriram Krishnamoorthy
2
Department of Electrical and Computer Engineering, University of Utah
, Salt Lake City, Utah 84112, USA
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Michael A. Scarpulla
Michael A. Scarpulla
b)
1
Department of Materials Science and Engineering, University of Utah
, Salt Lake City, Utah 84112, USA
b)Author to whom correspondence should be addressed: [email protected]. Also at: Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.
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b)Author to whom correspondence should be addressed: [email protected]. Also at: Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.
J. Appl. Phys. 128, 195703 (2020)
Article history
Received:
July 16 2020
Accepted:
November 04 2020
Citation
Brian A. Eisner, Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, Michael A. Scarpulla; Compensation in homoepitaxial β-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy. J. Appl. Phys. 21 November 2020; 128 (19): 195703. https://doi.org/10.1063/5.0022043
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