This theoretical–experimental study focuses on the formation of the substitutional-tri-interstitial cluster Cus1Cui3, which has been proposed as the photoluminescence defect CuPL. The configurations and electronic properties of the intermediate defects Cus1Cui1 and Cus1Cui2 are calculated, and their electrically active levels are obtained from conventional and Laplace deep-level transient spectroscopy. The vacancy formation energy near copper-related defects is calculated and found to be much smaller than in the perfect crystal. Then, we show how Cus1Cui3 could become the seed of agglomerates of Cus1Cui3 “units.” The discussion focuses mostly on unanswered questions about the discrepancies between the calculated and measured properties of CuPL and Cus1Cui3.
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24 February 2020
Research Article|
February 25 2020
The Cu photoluminescence defect and the early stages of Cu precipitation in Si
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Special Collection:
Defects in Semiconductors 2020
T. M. Vincent;
T. M. Vincent
1
Physics Department, Texas Tech University
, Lubbock, Texas 79409-1051, USA
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S. K. Estreicher
;
S. K. Estreicher
a)
1
Physics Department, Texas Tech University
, Lubbock, Texas 79409-1051, USA
a)Author to whom correspondence should be addressed: [email protected]
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J. Weber
;
J. Weber
2
Institut für Angewandte Physik, Technische Universität Dresden
, 01062 Dresden, Germany
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V. Kolkovsky;
V. Kolkovsky
2
Institut für Angewandte Physik, Technische Universität Dresden
, 01062 Dresden, Germany
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N. Yarykin
N. Yarykin
3
Institute of Microelectronics Technology RAS
, Chernogolovka 142432, Russia
Search for other works by this author on:
T. M. Vincent
1
S. K. Estreicher
1,a)
J. Weber
2
V. Kolkovsky
2
N. Yarykin
3
1
Physics Department, Texas Tech University
, Lubbock, Texas 79409-1051, USA
2
Institut für Angewandte Physik, Technische Universität Dresden
, 01062 Dresden, Germany
3
Institute of Microelectronics Technology RAS
, Chernogolovka 142432, Russia
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the Special Topic on Defects in Semiconductors 2020.
J. Appl. Phys. 127, 085704 (2020)
Article history
Received:
December 02 2019
Accepted:
February 06 2020
Citation
T. M. Vincent, S. K. Estreicher, J. Weber, V. Kolkovsky, N. Yarykin; The Cu photoluminescence defect and the early stages of Cu precipitation in Si. J. Appl. Phys. 24 February 2020; 127 (8): 085704. https://doi.org/10.1063/1.5140456
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