Scanning spreading resistance microscopy (SSRM) was applied on boron (B) doped bulk and nanostructured silicon (Si) samples. Finite element simulations are performed to calculate the expected resistance profile based on secondary ion mass spectrometry data of the chemical B profile. Differences between experimental and simulated resistance scans are consistently described by the interaction of electrically active dopants with defect states. These states are strongly correlated to the cross-sectional sample preparation applied before the SSRM analysis. Whereas the B-doped bulk sample only reveals preparation induced bulk and surface defects, the SSRM scan of B-doped Si pillars is additionally affected by interface defects at the outer shell of the pillar. These interface defects do not only affect the concentration of charged carriers in the Si pillar but could also influence dopant diffusion in nanostructured Si.
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7 February 2020
Research Article|
February 04 2020
Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy
Special Collection:
Defects in Semiconductors 2020
Jan K. Prüßing
;
Jan K. Prüßing
a)
1
Institute of Materials Physics, University of Münster
, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germany
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Tim Böckendorf;
Tim Böckendorf
1
Institute of Materials Physics, University of Münster
, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germany
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Gerry Hamdana;
Gerry Hamdana
2
Institute of Semiconductor Technology (IHT) and Laboratory of Emerging Nanometrology (LENA), Technische Universität Braunschweig
, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
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Erwin Peiner
;
Erwin Peiner
2
Institute of Semiconductor Technology (IHT) and Laboratory of Emerging Nanometrology (LENA), Technische Universität Braunschweig
, Hans-Sommer-Straße 66, D-38106 Braunschweig, Germany
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Hartmut Bracht
Hartmut Bracht
a)
1
Institute of Materials Physics, University of Münster
, Wilhelm-Klemm-Straße 10, D-48149 Münster, Germany
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a)
Authors to whom correspondence should be addressed: [email protected] and [email protected]
Note: This paper is part of the Special Topic on Defects in Semiconductors 2020.
J. Appl. Phys. 127, 055703 (2020)
Article history
Received:
October 31 2019
Accepted:
January 18 2020
Citation
Jan K. Prüßing, Tim Böckendorf, Gerry Hamdana, Erwin Peiner, Hartmut Bracht; Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy. J. Appl. Phys. 7 February 2020; 127 (5): 055703. https://doi.org/10.1063/1.5134558
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