Voids in SiO2 films deposited on GaN were probed by using monoenergetic positron beams. The films were fabricated on GaN substrates by using plasma-enhanced chemical vapor deposition. The size and density of the voids in the films increased up to an annealing temperature of 800 °C and then decreased at 1000 °C. The observed annealing behaviors of the voids were attributed to the desorption of impurities incorporated during the deposition process and the shrinkage of the Si–O matrix by high-temperature annealing. Vacancy-type defects were introduced into the GaN substrate after 1000 °C annealing in O2 atmosphere due to the diffusion of Ga from the substrate to the SiO2 film. No out-diffusion of Ga into the SiO2 film was observed for the annealing in N2 atmosphere. Thus, the observed out-diffusion of Ga was attributed to the enhanced oxidation of GaN during the annealing in O2 atmosphere. The diffusion of positrons implanted into the GaN substrate toward the SiO2 film was suppressed by annealing, suggesting a decrease in the negative charges in the SiO2 film or near the SiO2/GaN interface.
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7 February 2020
Research Article|
February 04 2020
Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams Available to Purchase
Akira Uedono
;
Akira Uedono
a)
1
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba
, Tsukuba, Ibaraki 305-8573, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Wataru Ueno;
Wataru Ueno
1
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba
, Tsukuba, Ibaraki 305-8573, Japan
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Takahiro Yamada;
Takahiro Yamada
2
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Takuji Hosoi;
Takuji Hosoi
2
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Werner Egger;
Werner Egger
3
Institut für Angewandte Physik und Messtechnik, Universität der Bundeswehr München
, 85577 Neubiberg, Germany
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Tönjes Koschine;
Tönjes Koschine
3
Institut für Angewandte Physik und Messtechnik, Universität der Bundeswehr München
, 85577 Neubiberg, Germany
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Christoph Hugenschmidt;
Christoph Hugenschmidt
4
Physics Department E21 and Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München
, 85748 Garching, Germany
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Marcel Dickmann;
Marcel Dickmann
4
Physics Department E21 and Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München
, 85748 Garching, Germany
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Heiji Watanabe
Heiji Watanabe
2
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
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Akira Uedono
1,a)
Wataru Ueno
1
Takahiro Yamada
2
Takuji Hosoi
2
Werner Egger
3
Tönjes Koschine
3
Christoph Hugenschmidt
4
Marcel Dickmann
4
Heiji Watanabe
2
1
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba
, Tsukuba, Ibaraki 305-8573, Japan
2
Graduate School of Engineering, Osaka University
, Suita, Osaka 565-0871, Japan
3
Institut für Angewandte Physik und Messtechnik, Universität der Bundeswehr München
, 85577 Neubiberg, Germany
4
Physics Department E21 and Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München
, 85748 Garching, Germany
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 127, 054503 (2020)
Article history
Received:
October 31 2019
Accepted:
January 19 2020
Citation
Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe; Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams. J. Appl. Phys. 7 February 2020; 127 (5): 054503. https://doi.org/10.1063/1.5134513
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