A defect quasi Fermi level (dQFL) control process based on above bandgap illumination was applied to control H and VN-complexes, which are the main contributors to the passivation and self-compensation, respectively, in Mg:GaN grown via metalorganic chemical vapor deposition. Secondary ion mass spectrometry measurements confirmed that the total Mg incorporation was unaffected by the process. However, the total H concentration was reduced to similar levels obtained by post-growth thermal activation prior to any annealing treatment. Similarly, the 2.8 eV emission in the photoluminescence spectra, attributed to compensating VN and its complexes, was reduced for the dQFL-process samples. After thermal activation and Ni/Au contact deposition, Hall effect measurements revealed lower resistivities (increased mobilities and free hole concentrations) for dQFL-grown samples with Mg doping concentrations above and below 2 × 1019 cm−3. All these results demonstrate that the dQFL process can effectively reduce the H-passivation and self-compensation of the Mg:GaN films.
Skip Nav Destination
CHORUS
Article navigation
31 January 2020
Research Article|
January 22 2020
Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control
A. Klump
;
A. Klump
a)
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
M. P. Hoffmann;
M. P. Hoffmann
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
Search for other works by this author on:
F. Kaess
;
F. Kaess
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
Search for other works by this author on:
J. Tweedie;
J. Tweedie
2
Adroit Materials, Inc.
, 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Search for other works by this author on:
P. Reddy
;
P. Reddy
2
Adroit Materials, Inc.
, 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Search for other works by this author on:
R. Kirste;
R. Kirste
2
Adroit Materials, Inc.
, 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Search for other works by this author on:
Z. Sitar
;
Z. Sitar
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
2
Adroit Materials, Inc.
, 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA
Search for other works by this author on:
R. Collazo
R. Collazo
1
Department of Materials Science and Engineering, North Carolina State University
, Raleigh, North Carolina 27695-7919, USA
Search for other works by this author on:
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 127, 045702 (2020)
Article history
Received:
August 28 2019
Accepted:
January 05 2020
Citation
A. Klump, M. P. Hoffmann, F. Kaess, J. Tweedie, P. Reddy, R. Kirste, Z. Sitar, R. Collazo; Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control. J. Appl. Phys. 31 January 2020; 127 (4): 045702. https://doi.org/10.1063/1.5126004
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.