Fault-tolerant spin-based quantum computers will require fast and accurate qubit read out. This can be achieved using radiofrequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of . The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in of integration time.
Skip Nav Destination
Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Article navigation
28 June 2020
Research Article|
June 29 2020
Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier
Available to Purchase
F. J. Schupp
;
F. J. Schupp
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
Search for other works by this author on:
F. Vigneau
;
F. Vigneau
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
Search for other works by this author on:
Y. Wen
;
Y. Wen
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
Search for other works by this author on:
A. Mavalankar;
A. Mavalankar
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
Search for other works by this author on:
J. Griffiths;
J. Griffiths
2
Cavendish Laboratory
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
Search for other works by this author on:
G. A. C. Jones;
G. A. C. Jones
2
Cavendish Laboratory
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
Search for other works by this author on:
I. Farrer
;
I. Farrer
2
Cavendish Laboratory
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
3
Department of Electronic and Electrical Engineering, University of Sheffield
, Sheffield S1 3JD, United Kingdom
Search for other works by this author on:
D. A. Ritchie
;
D. A. Ritchie
2
Cavendish Laboratory
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
Search for other works by this author on:
C. G. Smith;
C. G. Smith
2
Cavendish Laboratory
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
Search for other works by this author on:
L. C. Camenzind;
L. C. Camenzind
4
Department of Physics, University of Basel
, 4056 Basel, Switzerland
Search for other works by this author on:
L. Yu;
L. Yu
4
Department of Physics, University of Basel
, 4056 Basel, Switzerland
Search for other works by this author on:
D. M. Zumbühl
;
D. M. Zumbühl
4
Department of Physics, University of Basel
, 4056 Basel, Switzerland
Search for other works by this author on:
G. A. D. Briggs
;
G. A. D. Briggs
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
Search for other works by this author on:
N. Ares
;
N. Ares
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
Search for other works by this author on:
E. A. Laird
E. A. Laird
a)
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
5
Department of Physics, University of Lancaster
, Lancaster LA1 4YB, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
F. J. Schupp
1
F. Vigneau
1
A. Mavalankar
1
J. Griffiths
2
G. A. C. Jones
2
I. Farrer
2,3
D. A. Ritchie
2
C. G. Smith
2
L. C. Camenzind
4
L. Yu
4
D. M. Zumbühl
4
G. A. D. Briggs
1
N. Ares
1
E. A. Laird
1,5,a)
1
Department of Materials, University of Oxford
, 16 Parks Road, Oxford OX1 3PH, United Kingdom
2
Cavendish Laboratory
, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
3
Department of Electronic and Electrical Engineering, University of Sheffield
, Sheffield S1 3JD, United Kingdom
4
Department of Physics, University of Basel
, 4056 Basel, Switzerland
5
Department of Physics, University of Lancaster
, Lancaster LA1 4YB, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 127, 244503 (2020)
Article history
Received:
February 25 2020
Accepted:
June 14 2020
Connected Content
Citation
F. J. Schupp, F. Vigneau, Y. Wen, A. Mavalankar, J. Griffiths, G. A. C. Jones, I. Farrer, D. A. Ritchie, C. G. Smith, L. C. Camenzind, L. Yu, D. M. Zumbühl, G. A. D. Briggs, N. Ares, E. A. Laird; Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier. J. Appl. Phys. 28 June 2020; 127 (24): 244503. https://doi.org/10.1063/5.0005886
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Related Content
Probing quantum devices with radio-frequency reflectometry
Appl. Phys. Rev. (February 2023)
Readout of a quantum processor with high dynamic range Josephson parametric amplifiers
Appl. Phys. Lett. (January 2023)
Nanoscale radiofrequency impedance sensors with unconditionally stable tuning
J. Appl. Phys. (October 2009)
Kinetic inductance traveling-wave amplifiers for multiplexed qubit readout
Appl. Phys. Lett. (December 2018)
Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor
Appl. Phys. Lett. (May 2017)