We report on the fabrication and optical characteristics of microdisk (MD) resonators with Er,O-codoped GaAs (GaAs:Er,O) as an active component. MD resonators based on GaAs:Er,O with different sidewall angles are fabricated by electron beam lithography followed by two different processes: dry and wet etching. Numerical simulations using a finite-difference time-domain method demonstrate an increase in the cavity quality (Q) factor of the MDs when sharpening the taper angle of the MDs. Micro-photoluminescence characterization of the MD resonators with excitation by a He–Ne laser reveals an 11.4-fold enhancement of Er-related luminescence and a cavity Q factor of 4.2 × 103. For the MD resonators with tapered sidewalls, further enhancement of Er luminescence and increased Q factor (>9.0 × 103) are observed.
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21 June 2020
Research Article|
June 15 2020
Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs Available to Purchase
Special Collection:
Defects in Semiconductors 2020
R. Higashi;
R. Higashi
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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M. Ogawa
;
M. Ogawa
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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J. Tatebayashi
;
J. Tatebayashi
a)
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
a)Author to whom correspondence should be addressed: [email protected]
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N. Fujioka;
N. Fujioka
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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D. Timmerman
;
D. Timmerman
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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S. Ichikawa
;
S. Ichikawa
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Y. Fujiwara
Y. Fujiwara
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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R. Higashi
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
J. Tatebayashi
a)
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
N. Fujioka
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
D. Timmerman
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
S. Ichikawa
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Y. Fujiwara
Department of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the Special Topic on Defects in Semiconductors 2020.
J. Appl. Phys. 127, 233101 (2020)
Article history
Received:
January 01 2020
Accepted:
May 30 2020
Citation
R. Higashi, M. Ogawa, J. Tatebayashi, N. Fujioka, D. Timmerman, S. Ichikawa, Y. Fujiwara; Enhancement of Er luminescence in microdisk resonators made of Er,O-codoped GaAs. J. Appl. Phys. 21 June 2020; 127 (23): 233101. https://doi.org/10.1063/1.5144159
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