We have studied systematically the effect of field cooling on the magnetic properties of continuous and porous IrMn/[Co/Pd] films. It is found that the coexistence of two ferromagnetic (FM) phases in the porous film, namely, hard-magnetic and soft-magnetic ones, with significantly different magnetic properties relates to the role of pore edges and modifies its magnetic and magnetoresistive properties. It is shown that annealing of the films with their subsequent cooling in an external magnetic field applied for aligning the magnetic moments in the antiferromagnetic (AFM) IrMn layer improves effectively the uniaxial perpendicular anisotropy of the [Co/Pd] layer and induces unidirectional anisotropy in its hard-magnetic regions, blocking simultaneously the soft-magnetic parts by pinning their magnetic moments along the film plane. Magnetoresistance of both continuous and porous films is found to be determined mainly by electron–magnon scattering, whereas the complex morphology of the porous film providing different orientations of exchange coupling at the AFM/FM interface in different film regions modifies significantly the spin-dependent electron transport. The revealed asymmetry of the field dependences of magnetoresistance is attributed both to unidirectional magnetic anisotropy of the FM layer and its splitting into magnetically nonequivalent regions in the porous films. The origin of the observed phenomenon is associated with a local influence on the orientation of AFM magnetic moments by an adjacent ferromagnet.
Skip Nav Destination
Article navigation
14 June 2020
Research Article|
June 09 2020
Influence of interfacial magnetic ordering and field-cooling effect on perpendicular exchange bias and magnetoresistance in nanoporous IrMn/[Co/Pd] films
Special Collection:
Antiferromagnetic Spintronics
Wen-Bin Wu;
Wen-Bin Wu
1
Institute for Nuclear Problems, Belarusian State University
, Minsk 220006, Belarus
Search for other works by this author on:
Julia Kasiuk
;
Julia Kasiuk
a)
1
Institute for Nuclear Problems, Belarusian State University
, Minsk 220006, Belarus
a)Author to whom correspondence should be addressed: julia-nechaj@yandex.ru
Search for other works by this author on:
Thi Ngoc Anh Nguyen
;
Thi Ngoc Anh Nguyen
2
Institute of Materials Science, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
3
Graduate University of Science and Technology, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
Search for other works by this author on:
Janusz Przewoźnik
;
Janusz Przewoźnik
4
Faculty of Physics and Applied Computer Science, Department of Solid State Physics, AGH University of Science and Technology
, Krakow 30-059, Poland
Search for other works by this author on:
Julia Fedotova
;
Julia Fedotova
1
Institute for Nuclear Problems, Belarusian State University
, Minsk 220006, Belarus
Search for other works by this author on:
Czesław Kapusta;
Czesław Kapusta
4
Faculty of Physics and Applied Computer Science, Department of Solid State Physics, AGH University of Science and Technology
, Krakow 30-059, Poland
Search for other works by this author on:
Olga Kupreeva;
Olga Kupreeva
5
Belarusian State University of Informatics and Radioelectronics
, Minsk 220013, Belarus
Search for other works by this author on:
Serguei Lazarouk;
Serguei Lazarouk
5
Belarusian State University of Informatics and Radioelectronics
, Minsk 220013, Belarus
Search for other works by this author on:
Khanh Tung Do;
Khanh Tung Do
2
Institute of Materials Science, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
Search for other works by this author on:
Thanh Huong Nguyen
;
Thanh Huong Nguyen
2
Institute of Materials Science, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
Search for other works by this author on:
Hong Ky Vu;
Hong Ky Vu
2
Institute of Materials Science, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
Search for other works by this author on:
Hoai Linh Pham;
Hoai Linh Pham
2
Institute of Materials Science, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
Search for other works by this author on:
Dinh Lam Vu;
Dinh Lam Vu
2
Institute of Materials Science, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
3
Graduate University of Science and Technology, Vietnam Academy of Science and Technology
, 18 Hoang Quoc Viet, Cau Giay, Hanoi 11355, Vietnam
Search for other works by this author on:
Johan Åkerman
Johan Åkerman
6
Department of Physics, University of Gothenburg
, Göteborg 41296, Sweden
Search for other works by this author on:
a)Author to whom correspondence should be addressed: julia-nechaj@yandex.ru
Note: This paper is part of the special topic on Antiferromagnetic Spintronics.
J. Appl. Phys. 127, 223904 (2020)
Article history
Received:
February 28 2020
Accepted:
May 22 2020
Citation
Wen-Bin Wu, Julia Kasiuk, Thi Ngoc Anh Nguyen, Janusz Przewoźnik, Julia Fedotova, Czesław Kapusta, Olga Kupreeva, Serguei Lazarouk, Khanh Tung Do, Thanh Huong Nguyen, Hong Ky Vu, Hoai Linh Pham, Dinh Lam Vu, Johan Åkerman; Influence of interfacial magnetic ordering and field-cooling effect on perpendicular exchange bias and magnetoresistance in nanoporous IrMn/[Co/Pd] films. J. Appl. Phys. 14 June 2020; 127 (22): 223904. https://doi.org/10.1063/5.0006194
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.