Positron annihilation spectroscopy in the Doppler and coincidence Doppler mode was applied on GeSn epitaxial layers, grown by chemical vapor deposition with different total As concentrations (– cm), high active As concentrations ( cm), and similar Sn concentrations (5.9%–6.4%). Positron traps are identified as mono-vacancy complexes. Vacancy-As complexes, V-As, formed during the growth were studied to deepen the understanding of the electrical passivation of the GeSn:As epilayers. Larger mono-vacancy complexes, V-As (), are formed as the As doping increases. The total As concentration shows a significant impact on the saturation of the number of As atoms () around the vacancies in the sample epilayers. The presence of V-As complexes decreases the dopant activation in the GeSn:As epilayers. Furthermore, the presence of Sn failed to hinder the formation of larger V-As complexes and thus failed to reduce the donor-deactivation.
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21 May 2020
Research Article|
May 15 2020
A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx
Afrina Khanam
;
Afrina Khanam
a)
1
Department of Applied Physics, Aalto University
, P.O. Box 15100, FI-00076 Aalto, Finland
2
Department of Physics, University of Helsinki
, P.O. Box 43, FI-00014 Helsinki, Finland
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Anurag Vohra
;
Anurag Vohra
3
Department of Physics and Astronomy, K.U. Leuven
, Celestijenlaan 200D, 3001 Leuven, Belgium
4
Imec vzw
, Kapeldreef 75, 3001 Leuven, Belgium
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Jonatan Slotte
;
Jonatan Slotte
1
Department of Applied Physics, Aalto University
, P.O. Box 15100, FI-00076 Aalto, Finland
2
Department of Physics, University of Helsinki
, P.O. Box 43, FI-00014 Helsinki, Finland
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Ilja Makkonen
;
Ilja Makkonen
2
Department of Physics, University of Helsinki
, P.O. Box 43, FI-00014 Helsinki, Finland
5
Helsinki Institute of Physics, University of Helsinki
, P.O. Box 43, FI-00014 Helsinki, Finland
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Roger Loo
;
Roger Loo
4
Imec vzw
, Kapeldreef 75, 3001 Leuven, Belgium
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Geoffrey Pourtois;
Geoffrey Pourtois
4
Imec vzw
, Kapeldreef 75, 3001 Leuven, Belgium
6
Department of Chemistry, Plasmant Research Group, University of Antwerp
, B-2610 Wilrijk-Antwerp, Belgium
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Wilfried Vandervorst
Wilfried Vandervorst
3
Department of Physics and Astronomy, K.U. Leuven
, Celestijenlaan 200D, 3001 Leuven, Belgium
4
Imec vzw
, Kapeldreef 75, 3001 Leuven, Belgium
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a)
Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 127, 195703 (2020)
Article history
Received:
February 07 2020
Accepted:
April 30 2020
Citation
Afrina Khanam, Anurag Vohra, Jonatan Slotte, Ilja Makkonen, Roger Loo, Geoffrey Pourtois, Wilfried Vandervorst; A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx. J. Appl. Phys. 21 May 2020; 127 (19): 195703. https://doi.org/10.1063/5.0003999
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