We present work on a novel In0.53Ga0.47As/AlAs metamorphic asymmetric spacer layer tunnel (mASPAT) diode structure, which was grown on GaAs by solid source molecular beam epitaxy. mASPAT diodes with different mesa sizes were fabricated and tested following growth under optimal conditions. The measured I–V characteristics of these tunneling devices showed rectifying behavior resulting from the asymmetric design of the epitaxial spacer layers. The extracted curvature coefficient, junction resistance, and leakage currents at −1 V resulted in an estimated theoretical cut-off frequency at zero bias exceeding 180 GHz for 4 × 4 μm2 mesa devices. The obtained results demonstrate the potential use of mASPAT devices on GaAs as a low-cost alternative to devices fabricated on InP substrates for high-volume zero bias microwave and millimeter-wave detectors.
Skip Nav Destination
Article navigation
21 May 2020
Research Article|
May 21 2020
InGaAs/AlAs/GaAs metamorphic asymmetric spacer layer tunnel (mASPAT) diodes for microwaves and millimeter-waves detection
A. Salhi
;
A. Salhi
a)
School of Electrical and Electronic Engineering, The University of Manchester
, Sackville Street, Manchester M13 9PL, United Kingdom
a)Author to whom correspondence should be addressed: abdelmajid.salhi@manchester.ac.uk
Search for other works by this author on:
J. Sexton;
J. Sexton
School of Electrical and Electronic Engineering, The University of Manchester
, Sackville Street, Manchester M13 9PL, United Kingdom
Search for other works by this author on:
S. G. Muttlak
;
S. G. Muttlak
School of Electrical and Electronic Engineering, The University of Manchester
, Sackville Street, Manchester M13 9PL, United Kingdom
Search for other works by this author on:
O. Abdulwahid
;
O. Abdulwahid
School of Electrical and Electronic Engineering, The University of Manchester
, Sackville Street, Manchester M13 9PL, United Kingdom
Search for other works by this author on:
A. Hadfield
;
A. Hadfield
School of Electrical and Electronic Engineering, The University of Manchester
, Sackville Street, Manchester M13 9PL, United Kingdom
Search for other works by this author on:
M. Missous
M. Missous
School of Electrical and Electronic Engineering, The University of Manchester
, Sackville Street, Manchester M13 9PL, United Kingdom
Search for other works by this author on:
a)Author to whom correspondence should be addressed: abdelmajid.salhi@manchester.ac.uk
J. Appl. Phys. 127, 194505 (2020)
Article history
Received:
April 09 2020
Accepted:
May 07 2020
Citation
A. Salhi, J. Sexton, S. G. Muttlak, O. Abdulwahid, A. Hadfield, M. Missous; InGaAs/AlAs/GaAs metamorphic asymmetric spacer layer tunnel (mASPAT) diodes for microwaves and millimeter-waves detection. J. Appl. Phys. 21 May 2020; 127 (19): 194505. https://doi.org/10.1063/5.0010369
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.