Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In0.09Ga0.91N/Al0.19Ga0.81N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition energies are consistently lower than the calculation based on structural parameters extracted from x-ray diffraction measurements. This indicates the presence of indium composition fluctuations in InGaN and hence local bandgap reduction that produces charge localization centers. The spectral width of the low-temperature PL of our m-plane InGaN/AlGaN superlattices is narrower than previously reported for m-plane InGaN/GaN quantum wells grown by MOCVD. The PL integrated intensity drops rapidly, though, as the temperature is increased to 300 K, indicating strong non-radiative recombination at room temperature. Time-resolved PL at low temperatures was performed to characterize the relaxation time scales in an undoped and a doped superlattice.
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14 May 2020
Research Article|
May 08 2020
Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices
Yang Cao;
Yang Cao
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
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Brandon Dzuba;
Brandon Dzuba
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
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Brenden A. Magill;
Brenden A. Magill
3
Department of Physics, Virginia Tech
, Blacksburg, Virginia 24061, USA
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Alexander Senichev
;
Alexander Senichev
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
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Trang Nguyen;
Trang Nguyen
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
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Rosa E. Diaz;
Rosa E. Diaz
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
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Michael J. Manfra;
Michael J. Manfra
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
4
School of Electrical and Computer Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
5
School of Materials Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
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Stephen McGill
;
Stephen McGill
6
National High Magnetic Field Laboratory
, Tallahassee, Florida 32310, USA
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Carlos Garcia;
Carlos Garcia
6
National High Magnetic Field Laboratory
, Tallahassee, Florida 32310, USA
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Giti A. Khodaparast
;
Giti A. Khodaparast
3
Department of Physics, Virginia Tech
, Blacksburg, Virginia 24061, USA
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Oana Malis
Oana Malis
a)
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
a)Author to whom correspondence should be addressed: [email protected]
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Yang Cao
1
Brandon Dzuba
1,2
Brenden A. Magill
3
Alexander Senichev
1,2
Trang Nguyen
1
Rosa E. Diaz
2
Michael J. Manfra
1,2,4,5
Stephen McGill
6
Carlos Garcia
6
Giti A. Khodaparast
3
Oana Malis
1,a)
1
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
2
Birck Nanotechnology Center
, West Lafayette, Indiana 47907, USA
3
Department of Physics, Virginia Tech
, Blacksburg, Virginia 24061, USA
4
School of Electrical and Computer Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
5
School of Materials Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
6
National High Magnetic Field Laboratory
, Tallahassee, Florida 32310, USA
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 127, 185702 (2020)
Article history
Received:
February 04 2020
Accepted:
April 23 2020
Citation
Yang Cao, Brandon Dzuba, Brenden A. Magill, Alexander Senichev, Trang Nguyen, Rosa E. Diaz, Michael J. Manfra, Stephen McGill, Carlos Garcia, Giti A. Khodaparast, Oana Malis; Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices. J. Appl. Phys. 14 May 2020; 127 (18): 185702. https://doi.org/10.1063/5.0003740
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