The realization of p-type transparent conductive oxides (TCOs) is a long-standing difficulty because of their generally large hole effective mass and low doping limit ascribed to the strong electronegativity of oxygen. By introducing a Bi atom with a lone-pair s orbital on the B site, double perovskite Ba2BiTaO6 could exhibit a dispersive upper valence band and a small hole effective mass due to the strong sp antibonding coupling. In contrast to n-type TCOs, i.e., ZnO and In2O3, first-principles studies on the intrinsic defects of Ba2BiTaO6 show that it is able to exhibit a good p-type property or stay intrinsic instead of being n-type by tuning the chemical potentials and its dominated defects (VBa, VBi, BaBi, and BiTa) are shallow acceptors, indicating that Ba2BiTaO6 is able to be a promising p-type TCO. This work shows that perovskites could be a class of potential p-type TCOs by introducing strong sp coupling with lone-pair-s-orbital elements.
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7 May 2020
Research Article|
May 04 2020
Double perovskite Ba2BiTaO6 as a promising p-type transparent conductive oxide: A first-principles defect study Available to Purchase
Special Collection:
Defects in Semiconductors 2020
Yuan Yin
;
Yuan Yin
1
Soochow Institute for Energy and Materials InnovationS (SIEMIS), College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University
, Suzhou 215006, China
2
College of Physics and Optoelectronic Technology, Baoji University of Arts and Sciences
, Baoji 721016, China
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Yelong Wu
;
Yelong Wu
3
Department of Applied Physics and the MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University
, Xi'an, Shaanxi 710049, China
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Guangde Chen;
Guangde Chen
3
Department of Applied Physics and the MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University
, Xi'an, Shaanxi 710049, China
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Wan-Jian Yin
Wan-Jian Yin
a)
1
Soochow Institute for Energy and Materials InnovationS (SIEMIS), College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University
, Suzhou 215006, China
a)Author to whom correspondence should be addressed: [email protected]
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Yuan Yin
1,2
Yelong Wu
3
Guangde Chen
3
Wan-Jian Yin
1,a)
1
Soochow Institute for Energy and Materials InnovationS (SIEMIS), College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University
, Suzhou 215006, China
2
College of Physics and Optoelectronic Technology, Baoji University of Arts and Sciences
, Baoji 721016, China
3
Department of Applied Physics and the MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University
, Xi'an, Shaanxi 710049, China
a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the Special Topic on Defects in Semiconductors 2020.
J. Appl. Phys. 127, 175703 (2020)
Article history
Received:
December 03 2019
Accepted:
April 15 2020
Citation
Yuan Yin, Yelong Wu, Guangde Chen, Wan-Jian Yin; Double perovskite Ba2BiTaO6 as a promising p-type transparent conductive oxide: A first-principles defect study. J. Appl. Phys. 7 May 2020; 127 (17): 175703. https://doi.org/10.1063/1.5140699
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