Since the BGaN alloy is considered a promising material in the wide range of optoelectronic applications, a detailed study of its band structure and optical properties is highly demanded. Here, layers with 0.5%, 1.1%, and 1.2% B were grown by metalorganic vapor-phase epitaxy on AlN/sapphire templates and investigated by structural and optical methods. The bandgaps of the investigated alloys were examined by contactless electroreflectance (CER) spectroscopy. Because no GaN layer is present in the investigated samples, the detected CER resonances do not overlap with the GaN-related signal, which is typical for BGaN layers grown on GaN templates. Thus, the energy of the bandgap-related transition in BGaN samples can be unambiguously determined from the resonances observed in the CER spectra. The boron-induced redshift of the bandgap was determined to be about 60 meV/% B for the studied samples. By means of photoluminescence measurements, the deteriorating optical quality of samples with increasing boron content is shown as the decreasing bandgap- to defect-related emission intensity ratio. What is more, the defect-related emission is shifted from typical for GaN yellow range to the red and is located at 1.9 eV for all BGaN samples.
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30 April 2020
Research Article|
April 29 2020
Boron influence on bandgap and photoluminescence in BGaN grown on AlN
E. Zdanowicz
;
E. Zdanowicz
a)
1
Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology
, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
2
ŁUKASIEWICZ Research Network—PORT Polish Center for Technology Development
, Stabłowicka 147, 54-066 Wrocław, Poland
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D. Iida
;
D. Iida
3
Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology
, Thuwal 23955-6900, Saudi Arabia
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L. Pawlaczyk
;
L. Pawlaczyk
4
Department of Nanometrology, Wroclaw University of Science and Technology
, Janiszewskiego 11/17, 50-372 Wrocław, Poland
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J. Serafinczuk
;
J. Serafinczuk
2
ŁUKASIEWICZ Research Network—PORT Polish Center for Technology Development
, Stabłowicka 147, 54-066 Wrocław, Poland
4
Department of Nanometrology, Wroclaw University of Science and Technology
, Janiszewskiego 11/17, 50-372 Wrocław, Poland
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R. Szukiewicz
;
R. Szukiewicz
2
ŁUKASIEWICZ Research Network—PORT Polish Center for Technology Development
, Stabłowicka 147, 54-066 Wrocław, Poland
5
Institute of Experimental Physics, University of Wrocław
, Maxa Borna 9, 50-204 Wrocław, Poland
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R. Kudrawiec
;
R. Kudrawiec
1
Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology
, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
2
ŁUKASIEWICZ Research Network—PORT Polish Center for Technology Development
, Stabłowicka 147, 54-066 Wrocław, Poland
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D. Hommel
;
D. Hommel
2
ŁUKASIEWICZ Research Network—PORT Polish Center for Technology Development
, Stabłowicka 147, 54-066 Wrocław, Poland
5
Institute of Experimental Physics, University of Wrocław
, Maxa Borna 9, 50-204 Wrocław, Poland
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K. Ohkawa
K. Ohkawa
3
Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology
, Thuwal 23955-6900, Saudi Arabia
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a)
Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 127, 165703 (2020)
Article history
Received:
November 29 2019
Accepted:
April 11 2020
Citation
E. Zdanowicz, D. Iida, L. Pawlaczyk, J. Serafinczuk, R. Szukiewicz, R. Kudrawiec, D. Hommel, K. Ohkawa; Boron influence on bandgap and photoluminescence in BGaN grown on AlN. J. Appl. Phys. 30 April 2020; 127 (16): 165703. https://doi.org/10.1063/1.5140413
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