High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with the silicon-based platforms because of the difficulty of their direct growth on a silicon substrate. Here, we report high-speed, ultra-small-size on-chip electroluminescence (EL) emitters based on semiconducting single-walled carbon nanotube (SWNT) thin films. The peaks of the EL emission spectra are about 0.15-eV redshifted from the peaks of the absorption and photoluminescence emission spectra, which probably suggest emission from trions. High-speed responses of ∼100 ps were experimentally observed from the EL emitters, which indicate the possibility of several-GHz modulation. The pulsed light generation was also obtained by applying the pulse voltage. These high-speed and ultra-small-size EL emitters can enable novel on-chip optoelectronic devices for highly integrated optoelectronics and silicon photonics.
High-speed electroluminescence from semiconducting carbon nanotube films
Hidenori Takahashi, Yuji Suzuki, Norito Yoshida, Kenta Nakagawa, Hideyuki Maki; High-speed electroluminescence from semiconducting carbon nanotube films. J. Appl. Phys. 30 April 2020; 127 (16): 164301. https://doi.org/10.1063/5.0002092
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