Ge:Mn thick films ( m) with low average Mn concentration (%) were prepared by ion implantation at 77 K followed by either conventional or flashlamp annealing. The films were characterized by x-ray diffraction, secondary ion mass spectrometry, magnetometry, and infrared transmission (100–6500 cm). Post-annealing at a high enough temperature recrystallizes the amorphous Ge:Mn films without significant migration of Mn to the surface, while solid phase epitaxy does not occur, resulting in polycrystalline films. Annealing causes an estimated 50%–80% of the implanted Mn to migrate to Mn-rich clusters or form MnGe, while the remainder enters the Ge lattice substitutionally creating free holes. Evidence for free holes comes from the structure in the mid-infrared absorption coefficient that is similar to previous observations in p-type Ge. The data suggest that the maximum solubility of Mn in the Ge crystalline lattice has an upper limit of %.
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