We studied InAlBiAs thin films of less than 300 nm on the InP substrate with Bi composition up to 3.2%. The samples were grown by molecular beam epitaxy at low growth temperature and were shown to be fully strained to the substrate and have smooth interfaces. A bandgap reduction around 47 meV/%Bi was observed via spectroscopic ellipsometry. The valence band anticrossing model was used to fit the experimental data. The bandgaps of with more than 3% Bi are much lower than the expected values from the model, which could be the result of alloy disorders.
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