Bismuth incorporation and surface reconstruction have been studied simultaneously during GaAsBi growth by molecular beam epitaxy by means of in situ wafer curvature monitoring and reflection high energy electron diffraction, respectively. Growth temperature and flux ratio have been varied successively. As/Ga atomic ratio close to unity has been applied for the study of the growth temperature effect. During the growth regime under the (1 × 3) reconstruction, Bi incorporation is found to be independent of the growth temperature, for temperatures where Bi desorption is insignificant. On the contrary, Bi incorporation becomes highly dependent on the growth temperature as soon as the (2 × 1) reconstruction regime is reached. Only for the lowest temperatures, the Bi incorporation reaches the same level during the (2 × 1) reconstruction than for the (1 × 3) reconstruction. When the As/Ga flux ratio is increased, the bismuth incorporation is observed to decrease for GaAsBi growth in the (2 × 1) reconstruction regime. Our results indicate that the (1 × 3) and (2 × 1) surface reconstructions are always successively observed and that an energy barrier has to overcome to transit from the (1 × 3) to the (2 × 1) reconstruction, with this mechanism being temperature dependent. Finally, a difference in surface stress with reconstruction has been identified.
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7 September 2019
Research Article|
September 06 2019
Links between bismuth incorporation and surface reconstruction during GaAsBi growth probed by in situ measurements
Special Collection:
Highly Mismatched Semiconductors Alloys: from Atoms to Devices
C. Cornille;
C. Cornille
a)
LAAS-CNRS, Université de Toulouse
, CNRS, UPS, 7 Avenue Colonel Roche, 31400 Toulouse, France
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A. Arnoult;
A. Arnoult
LAAS-CNRS, Université de Toulouse
, CNRS, UPS, 7 Avenue Colonel Roche, 31400 Toulouse, France
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Q. Gravelier;
Q. Gravelier
LAAS-CNRS, Université de Toulouse
, CNRS, UPS, 7 Avenue Colonel Roche, 31400 Toulouse, France
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C. Fontaine
C. Fontaine
b)
LAAS-CNRS, Université de Toulouse
, CNRS, UPS, 7 Avenue Colonel Roche, 31400 Toulouse, France
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a)
Email: clara.cornille@laas.fr
b)
Email: chantal.fontaine@laas.fr
Note: This paper is part of the Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices.
J. Appl. Phys. 126, 093106 (2019)
Article history
Received:
June 04 2019
Accepted:
August 16 2019
Citation
C. Cornille, A. Arnoult, Q. Gravelier, C. Fontaine; Links between bismuth incorporation and surface reconstruction during GaAsBi growth probed by in situ measurements. J. Appl. Phys. 7 September 2019; 126 (9): 093106. https://doi.org/10.1063/1.5111932
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