We reconstruct the interface between ferroelectric (FE) lanthanum-doped lead zirconate titanate (PLZT) and an iridium oxide (IrOx) top electrode (TE), taking advantage of the interdiffusion of Ir and Pb during postdeposition annealing. The tetragonal perovskite phase with a low c/a axis ratio at the IrOx/PLZT interface is observed by X-ray diffraction. It is suggested that the low c/a axis ratio in the interfacial layer is due to the effect of diffusion of Ir from the TE-IrOx. It is also considered that the low c/a axis ratio interfacial layer functions as a nucleation layer for reversal of polarization, thereby achieving a low coercive electric field. The formation of the interfacial layer is very sensitive to the O2 content of the Ar/O2 atmosphere during TE-IrOx deposition. Although an optimized Ar/O2 ratio achieves excellent polarization characteristics (high polarization value and low coercive field), the optimum Ar/O2 region is very narrow at around 36% O2. In other Ar/O2 regions, a pyrochlore phase is formed at the interface owing to interdiffusion of the TE and FE films, and polarization characteristics deteriorate.
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21 August 2019
Research Article|
August 20 2019
Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions Available to Purchase
Kenji Nomura;
Kenji Nomura
a)
1
Devices and Materials Laboratory, Fujitsu Laboratories Ltd.
, Kawasaki 211-8588, Japan
a)Author to whom correspondence should be addressed: [email protected]
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Wensheng Wang
;
Wensheng Wang
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Ko Nakamura;
Ko Nakamura
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Takashi Eshita;
Takashi Eshita
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
3
Wakayama University
, Wakayama 640-8510, Japan
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Kazuaki Takai;
Kazuaki Takai
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Soichiro Ozawa;
Soichiro Ozawa
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Hideshi Yamaguchi;
Hideshi Yamaguchi
1
Devices and Materials Laboratory, Fujitsu Laboratories Ltd.
, Kawasaki 211-8588, Japan
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Satoru Mihara;
Satoru Mihara
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Yukinobu Hikosaka;
Yukinobu Hikosaka
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Hitoshi Saito;
Hitoshi Saito
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Yuji Kataoka;
Yuji Kataoka
1
Devices and Materials Laboratory, Fujitsu Laboratories Ltd.
, Kawasaki 211-8588, Japan
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Manabu Kojima
Manabu Kojima
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
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Kenji Nomura
1,a)
Wensheng Wang
2
Ko Nakamura
2
Takashi Eshita
2,3
Kazuaki Takai
2
Soichiro Ozawa
2
Hideshi Yamaguchi
1
Satoru Mihara
2
Yukinobu Hikosaka
2
Hitoshi Saito
2
Yuji Kataoka
1
Manabu Kojima
2
1
Devices and Materials Laboratory, Fujitsu Laboratories Ltd.
, Kawasaki 211-8588, Japan
2
Technology Division, System Memory Company, Fujitsu Semiconductor Ltd.
, Yokohama 222-0033, Japan
3
Wakayama University
, Wakayama 640-8510, Japan
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 126, 074105 (2019)
Article history
Received:
February 02 2019
Accepted:
July 25 2019
Citation
Kenji Nomura, Wensheng Wang, Ko Nakamura, Takashi Eshita, Kazuaki Takai, Soichiro Ozawa, Hideshi Yamaguchi, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito, Yuji Kataoka, Manabu Kojima; Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions. J. Appl. Phys. 21 August 2019; 126 (7): 074105. https://doi.org/10.1063/1.5091501
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