We have studied multicarrier contributions to the conductivity in low concentration (with Hall concentration below cm) nondoped bulk n-InN samples using Shubnikov-de Haas (SdH) in the tilted magnetic field as well as variable field resistivity tensor measurements. In some samples, the Shubnikov-de Haas effect also revealed, besides 3D electron gas, high mobility 2D electron contributions (with transport and quantum mobilities reaching the values of 5060 cm/V s and 1800 cm/V s, respectively, for one of our samples), which could hardly be assigned to the surface electrons as the latter are commonly believed to have mobility too low to be detected at magnetic fields not exceeding 12 T in our SdH measurements. The values of the effective masses derived from the temperature dependences of the SdH oscillation amplitudes scale with the concentration of 2D channels and are typical for low concentration InN, thus confirming that these contributions are presumably located on the InN side of some interfaces. This is one of the first experimental evaluations of the effective mass of nonsurface-related 2D electron gas in InN grown on GaN.
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