The unidirectional spin Hall magnetoresistance (USMR) is one of the most complex spin-dependent transport phenomena in ferromagnet/nonmagnet bilayers, which involves spin injection and accumulation due to the spin Hall effect, spin-dependent scattering, and magnon scattering at the interface or in the bulk of the ferromagnet. While USMR in metallic bilayers has been studied extensively in very recent years, its magnitude (∼10−5) is too small for practical applications. Here, we demonstrate a giant USMR effect in a heterostructure of BiSb topological insulator – GaMnAs ferromagnetic semiconductors. We obtained a large USMR ratio of 1.1% and found that this giant USMR is governed not by the giant magnetoresistancelike spin-dependent scattering but by magnon emission/absorption and strong spin-disorder scattering in the GaMnAs layer. Our results provide new insights into the complex physics of USMR, as well as a strategy for enhancing its magnitude for device applications.
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Giant unidirectional spin Hall magnetoresistance in topological insulator – ferromagnetic semiconductor heterostructures
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21 December 2019
Research Article|
December 17 2019
Giant unidirectional spin Hall magnetoresistance in topological insulator – ferromagnetic semiconductor heterostructures
Nguyen Huynh Duy Khang
;
Nguyen Huynh Duy Khang
1
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, 2-12-1 Ookayama, Meguro, Tokyo 152-0033, Japan
2
Department of Physics, Ho Chi Minh City University of Education
, 280 An Duong Vuong Street, District 5, Ho Chi Minh City 738242, Vietnam
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Pham Nam Hai
Pham Nam Hai
a)
1
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
, 2-12-1 Ookayama, Meguro, Tokyo 152-0033, Japan
3
Center for Spintronics Research Network (CSRN), The University of Tokyo
, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
4
CREST, Japan Science and Technology Agency
, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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a)
Electronic mail: [email protected]
J. Appl. Phys. 126, 233903 (2019)
Article history
Received:
November 01 2019
Accepted:
December 02 2019
Citation
Nguyen Huynh Duy Khang, Pham Nam Hai; Giant unidirectional spin Hall magnetoresistance in topological insulator – ferromagnetic semiconductor heterostructures. J. Appl. Phys. 21 December 2019; 126 (23): 233903. https://doi.org/10.1063/1.5134728
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