We have grown GaInSbBi single layers and GaInSbBi/GaSb multiquantum well (MQW) structures by molecular beam epitaxy. We observed that the addition of In strongly modifies and reduces the Bi incorporation into GaSb. For an In concentration of ∼3.7%, we reached a maximum Bi content of 10.5% while the highest Bi concentration falls to 3% with 10% of In. Additionally, droplets appear at lower Bi composition than in GaSbBi alloys. Finally, the optical properties of GaInSbBi/GaSb MQW structures were characterized by photoluminescence spectroscopy at room temperature. The longest emission wavelength observed was close to 2.6 μm for a composition of 10.5% and 3.7% of bismuth and indium, respectively.
Molecular-beam epitaxy of GaInSbBi alloys
Note: This paper is part of the Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices.
O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié, J.-B. Rodriguez; Molecular-beam epitaxy of GaInSbBi alloys. J. Appl. Phys. 21 October 2019; 126 (15): 155304. https://doi.org/10.1063/1.5096226
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