This study focuses on the relationship among defects, annealing temperatures, and solar cell properties in the molecular beam epitaxy-grown GaInNAsSb solar cells. Samples with an n-i-p double heterostructure were annealed at various temperatures from 650 to 850 °C, and the dynamics of deep-level defects were analyzed. A significant improvement was obtained between 750 and 800 °C due to suppression of both the traps and the nonradiative recombination centers. They were distinguished using the DC bias dependence of admittance spectra and were reconfirmed from the electroluminescence and quantum efficiency spectroscopy studies.
Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs
Note: This paper is part of the Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices.
Naoya Miyashita, Yilun He, Nazmul Ahsan, Yoshitaka Okada; Anneal mediated deep-level dynamics in GaInNAsSb dilute nitrides lattice-matched to GaAs. J. Appl. Phys. 14 October 2019; 126 (14): 143104. https://doi.org/10.1063/1.5111588
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