We investigated the electrical and optical properties of a highly mismatched AlInSb/GaAs photodiode sensor working in the mid-infrared range at room temperature. A substantial increase in the device performance was achieved by controlling the strain energy density in the dislocation filter layers and barrier layers to reduce the density of threading and interfacial dislocations, respectively. The resulting photodiode showed a high resistance-area product of 0.24 Ω cm2 and a peak detectivity of 2.2 × 109 cm Hz1/2 W–1 at 3.3 μm.
Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates
Note: This paper is part of the Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices.
H. Fujita, M. Nakayama, O. Morohara, H. Geka, Y. Sakurai, T. Nakao, T. Yamauchi, M. Suzuki, Y. Shibata, N. Kuze; Dislocation reduction in AlInSb mid-infrared photodiodes grown on GaAs substrates. J. Appl. Phys. 7 October 2019; 126 (13): 134501. https://doi.org/10.1063/1.5111933
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