We investigated the electrical and optical properties of a highly mismatched AlInSb/GaAs photodiode sensor working in the mid-infrared range at room temperature. A substantial increase in the device performance was achieved by controlling the strain energy density in the dislocation filter layers and barrier layers to reduce the density of threading and interfacial dislocations, respectively. The resulting photodiode showed a high resistance-area product of 0.24 Ω cm2 and a peak detectivity of 2.2 × 109 cm Hz1/2 W–1 at 3.3 μm.
REFERENCES
1.
T.
Dinh
, I.
Choi
, Y.
Son
, and J.
Kim
, Sens. Actuat. B Chem.
231
, 529
–538
(2016
). 2.
E. G.
Camargo
, Y.
Goda
, O.
Morohara
, H.
Fujita
, H.
Geka
, K.
Ueno
, Y.
Shibata
, and N.
Kuze
, Proc. SPIE
10404
, 104040R
(2017
). 3.
B. I.
Mirza
, G. R.
Nash
, S. J.
Smith
, L.
Buckle
, S. D.
Coomber
, M. T.
Emeny
, and T.
Ashley
, J. Appl. Phys.
104
, 063113
(2008
). 4.
M.
Razeghi
, Opto-Electron. Rev.
6
(3
), 155
(1998
).5.
A.
Rogalski
, K.
Adamiec
, and J.
Rutkowski
, Narrow-Gap Semiconductor Photodiodes
(SPIE
, Bellingham
, WA
, 2000
).6.
A.
Krier
and W.
Suleiman
, Appl. Phys. Lett.
89
, 083512
(2006
). 7.
T.
Ashley
, A. B.
Dean
, C. T.
Elliott
, C. F.
McConville
, G. J.
Pryce
, and C. R.
Whitehouse
, Appl. Phys. Lett.
59
, 1761
(1991
). 8.
K.
Ueno
, E. G.
Camargo
, T.
Katsumata
, H.
Goto
, N.
Kuze
, Y.
Kangawa
, and K.
Kakimoto
, Jpn. J. Appl. Phys.
52
, p092202
(2013
). 9.
J.
Piotrowski
and M.
Razeghi
, Proc. SPIE
2397
, 180
(1995
). 10.
N.
Kuze
, E. G.
Camargo
, K.
Ueno
, Y.
Kawakami
, Y.
Moriyasu
, K.
Nagase
, M.
Sato
, H.
Endo
, K.
Ishibashi
, and M.
Ozaki
, Phys. Status Solidi (c)
3
(3
), 431
–434
(2006
). 11.
K.
Ueno
, E. G.
Camargo
, T.
Morishita
, Y.
Moriyasu
, H.
Goto
, and N.
Kuze
, J. Cryst. Growth
323
, 463
–465
(2011
). 12.
S. Y.
Karpov
and Y. N.
Makarov
, Appl. Phys. Lett.
81
, 4721
(2002
). 13.
H.
Fujita
, K.
Ueno
, O.
Morohara
, E.
Camargo
, H.
Geka
, Y.
Shibata
, and N.
Kuze
, Phys. Status Solidi A
215
, 1700449
(2018
). 14.
T. D.
Mishima
, M.
Edirisooriya
, N.
Goel
, and M.
Santos
, Appl. Phys. Lett.
88
, 191908
(2006
). 15.
M.
Edirisooriya
, T. D.
Mishima
, and M. B.
Santos
, J. Vac. Sci. Technol. B
25
, 1063
(2007
). 16.
I.
George
, F.
Becagli
, H. Y.
Liu
, J.
Wu
, M.
Tang
, and R.
Beanland
, Semicond. Sci. Technol.
30
, 114004
(2015
). 17.
P. K.
Chakraborty
, G. C.
Datta
, and K. P.
Ghatak
, Phys. B
339
, 198
(2003
). 18.
P.
Martyniuk
, M.
Kopytko
, and A.
Rogalski
, Opto-Electron. Rev.
22
(2
), 127
–146
(2014). 19.
C. J.
Gu
, M.
Salmon
, and J.
Vitarelli
, Digest of the International Conference on Compound Semiconductor Manufacturing Technology, 6b.3, Palm Springs, CA, 16–19 May 2011 (CS Mantech, 2011).20.
R.
People
and J. C.
Bean
, Appl. Phys. Lett.
47
, 322
(1985
). © 2019 Author(s).
2019
Author(s)
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