Considering the pivotal role of interfaces in controlling the performance of organic electronic devices, implications of metal/organic interfacial quality in a Schottky barrier diode (SBD) are investigated. The nature of metal/organic interfaces and the thin film quality of regioregular poly (3-hexylthiophene) based SBDs fabricated in different device architectures are investigated using experimental and theoretical modeling. The importance of oxidized aluminum nanostructures as an interlayer at the Schottky interface for the dramatic enhancement of the rectification ratio (>106 at ±5 V) has been demonstrated, which is attributed to suppressed leakage current due to the oxide layer and the formation of a charge double layer. Furthermore, electrical performances of all the SBDs were modeled in terms of an underlying particular phenomenon solely or with the combination of multiple physical phenomena. The combined modeling equation used in this work fits well for the different device architectures, which validates its generality in order to extract the device parameters.
Skip Nav Destination
Article navigation
28 September 2019
Research Article|
September 25 2019
Role of device architecture and AlOX interlayer in organic Schottky diodes and their interpretation by analytical modeling
Nikita Kumari
;
Nikita Kumari
a)
1
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
, 2-4 Hibikino, Wakamatsu, Kitakyushu 8080196, Japan
a)Authors to whom correspondence should be addressed: shyam@life.kyutech.ac.jp and nikita.jisce@gmail.com
Search for other works by this author on:
Manish Pandey
;
Manish Pandey
b)
1
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
, 2-4 Hibikino, Wakamatsu, Kitakyushu 8080196, Japan
Search for other works by this author on:
Kengo Hamada;
Kengo Hamada
1
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
, 2-4 Hibikino, Wakamatsu, Kitakyushu 8080196, Japan
Search for other works by this author on:
Daisuke Hirotani;
Daisuke Hirotani
1
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
, 2-4 Hibikino, Wakamatsu, Kitakyushu 8080196, Japan
Search for other works by this author on:
Shuichi Nagamatsu
;
Shuichi Nagamatsu
2
Department of Computer Science and Electronics, Kyushu Institute of Technology
, 80-4 Kawazu, Iizuka 820-8502, Japan
Search for other works by this author on:
Shuzi Hayase;
Shuzi Hayase
1
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
, 2-4 Hibikino, Wakamatsu, Kitakyushu 8080196, Japan
Search for other works by this author on:
Shyam S. Pandey
Shyam S. Pandey
a)
1
Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
, 2-4 Hibikino, Wakamatsu, Kitakyushu 8080196, Japan
a)Authors to whom correspondence should be addressed: shyam@life.kyutech.ac.jp and nikita.jisce@gmail.com
Search for other works by this author on:
a)Authors to whom correspondence should be addressed: shyam@life.kyutech.ac.jp and nikita.jisce@gmail.com
b)
Present address: Organic Electronics Laboratory, Division of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan.
J. Appl. Phys. 126, 125501 (2019)
Article history
Received:
May 11 2019
Accepted:
September 04 2019
Citation
Nikita Kumari, Manish Pandey, Kengo Hamada, Daisuke Hirotani, Shuichi Nagamatsu, Shuzi Hayase, Shyam S. Pandey; Role of device architecture and AlOX interlayer in organic Schottky diodes and their interpretation by analytical modeling. J. Appl. Phys. 28 September 2019; 126 (12): 125501. https://doi.org/10.1063/1.5109083
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.
Related Content
Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures
J. Appl. Phys. (April 2013)
Barrier height enhancement in β -Ga2O3 Schottky diodes using an oxygen-rich ultra-thin AlOx interfacial layer
Appl. Phys. Lett. (August 2024)
Improving metal/semiconductor conductivity using AlOx interlayers on n-type and p-type Si
Appl. Phys. Lett. (August 2014)
Low-voltage-operation of flexible organic C8-BTBT thin-film transistors with a reactively sputtered AlOx gate dielectric
Appl. Phys. Lett. (August 2022)
Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack
J. Vac. Sci. Technol. B (March 2014)