Stoichiometric gallium oxide sulfide Ga2(O1 − xSx)3 thin-film alloys were synthesized by pulsed-laser deposition with x ≤ 0.35. All deposited Ga2(O1 − xSx)3 films were found to be amorphous. Despite the amorphous structure, the films have a well-defined, room-temperature optical bandgap tunable from 5.0 eV down to 3.0 eV. The optical absorption data are interpreted using a modified valence-band anticrossing model that is applicable for highly mismatched alloys. The model provides a quantitative method to more accurately determine the bandgap as well as an insight into how the band edges are changing with composition. The observed large reduction in energy bandgap with a small sulfur ratio arises from the anticrossing interaction between the valence band of Ga2O3 and the localized sulfur level at 1.0 eV above the Ga2O3 valence-band maximum.
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14 September 2019
Research Article|
September 13 2019
Amorphous gallium oxide sulfide: A highly mismatched alloy
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Special Collection:
Highly Mismatched Semiconductors Alloys: from Atoms to Devices
Maribel Jaquez;
Maribel Jaquez
a)
1
Materials Sciences Division, Lawrence Berkeley National Laboratory
, Berkeley, California 94720, USA
2
Department of Mechanical Engineering, University of California
, Berkeley, California 94720, USA
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Petra Specht;
Petra Specht
1
Materials Sciences Division, Lawrence Berkeley National Laboratory
, Berkeley, California 94720, USA
3
Department of Materials Science and Engineering, University of California
, Berkeley, California 94720, USA
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Kin Man Yu
;
Kin Man Yu
4
Department of Physics, City University of Hong Kong
, Kowloon, Hong Kong
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Wladek Walukiewicz;
Wladek Walukiewicz
1
Materials Sciences Division, Lawrence Berkeley National Laboratory
, Berkeley, California 94720, USA
3
Department of Materials Science and Engineering, University of California
, Berkeley, California 94720, USA
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Oscar D. Dubon
Oscar D. Dubon
b)
1
Materials Sciences Division, Lawrence Berkeley National Laboratory
, Berkeley, California 94720, USA
3
Department of Materials Science and Engineering, University of California
, Berkeley, California 94720, USA
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Maribel Jaquez
1,2,a)
Petra Specht
1,3
Kin Man Yu
4
Wladek Walukiewicz
1,3
Oscar D. Dubon
1,3,b)
1
Materials Sciences Division, Lawrence Berkeley National Laboratory
, Berkeley, California 94720, USA
2
Department of Mechanical Engineering, University of California
, Berkeley, California 94720, USA
3
Department of Materials Science and Engineering, University of California
, Berkeley, California 94720, USA
4
Department of Physics, City University of Hong Kong
, Kowloon, Hong Kong
a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
Note: This paper is part of the Special Topic on Highly Mismatched Semiconductors Alloys: From Atoms to Devices.
J. Appl. Phys. 126, 105708 (2019)
Article history
Received:
June 03 2019
Accepted:
August 21 2019
Citation
Maribel Jaquez, Petra Specht, Kin Man Yu, Wladek Walukiewicz, Oscar D. Dubon; Amorphous gallium oxide sulfide: A highly mismatched alloy. J. Appl. Phys. 14 September 2019; 126 (10): 105708. https://doi.org/10.1063/1.5111985
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