We report molecular beam epitaxy growth of Sr-doped BiSe films on the (111) BaF substrate, aimed to realize unusual superconducting properties inherent to SrBiSe single crystals. Despite the wide range of the compositions, we do not achieve superconductivity. To explore the reason for this, we study the structural, morphological, and electronic properties of the films and compare them with the corresponding properties of the single crystals. The dependence of the c-lattice constant in the films on the Sr content appears to be more than an order of magnitude stronger than that in the crystals. Correspondingly, all other properties also differ substantially, indicating that Sr atoms get different positions in lattices. We argue that these structural discrepancies arise from essential differences in growth conditions. Our research calls for more detailed structural studies and novel growth approaches for the design of superconducting SrBiSe thin films.
Skip Nav Destination
Article navigation
7 March 2019
Research Article|
March 04 2019
Effect of Sr doping on structure, morphology, and transport properties of BiSe epitaxial thin films
S. O. Volosheniuk;
S. O. Volosheniuk
a)
1
Skolkovo Institute of Science and Technology
, Skolkovo, Moscow 143025, Russia
Search for other works by this author on:
Yu. G. Selivanov;
Yu. G. Selivanov
b)
2
P.N. Lebedev Physical Institute of the RAS
, Moscow 119991, Russia
Search for other works by this author on:
M. A. Bryzgalov
;
M. A. Bryzgalov
2
P.N. Lebedev Physical Institute of the RAS
, Moscow 119991, Russia
Search for other works by this author on:
V. P. Martovitskii;
V. P. Martovitskii
2
P.N. Lebedev Physical Institute of the RAS
, Moscow 119991, Russia
Search for other works by this author on:
A. Yu. Kuntsevich
A. Yu. Kuntsevich
c)
2
P.N. Lebedev Physical Institute of the RAS
, Moscow 119991, Russia
Search for other works by this author on:
a)
Also at P.N. Lebedev Physical Institute of the RAS, Moscow 119991, Russia
b)
Electronic mail: selivan@lebedev.ru
c)
Electronic mail: alexkun@lebedev.ru
J. Appl. Phys. 125, 095103 (2019)
Article history
Received:
November 11 2018
Accepted:
February 13 2019
Citation
S. O. Volosheniuk, Yu. G. Selivanov, M. A. Bryzgalov, V. P. Martovitskii, A. Yu. Kuntsevich; Effect of Sr doping on structure, morphology, and transport properties of BiSe epitaxial thin films. J. Appl. Phys. 7 March 2019; 125 (9): 095103. https://doi.org/10.1063/1.5080692
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Selecting alternative metals for advanced interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, et al.
Defects in semiconductors
Cyrus E. Dreyer, Anderson Janotti, et al.
Related Content
The effect of high pressure on the electrical and transport properties of the InSb-MnSb magnetic eutectic composition
AIP Advances (March 2022)
Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy
J. Appl. Phys. (February 2021)
Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures
Appl. Phys. Lett. (March 2016)
Understanding sensitization behavior of lead selenide photoconductive detectors by charge separation model
J. Appl. Phys. (February 2014)
Study of sensitization process on mid-infrared uncooled PbSe photoconductive detectors leads to high detectivity
J. Appl. Phys. (March 2013)