Transport properties of CeO0.85F0.15SbS2 and undoped CeOSbS2 under high pressure were investigated experimentally and theoretically. Electrical resistivity measurements of the CeO0.85F0.15SbS2 single crystals were performed under various high pressures using a diamond anvil cell with boron-doped diamond electrodes. The samples showed the insulator to metal transition by applying a high pressure up to 30-40 GPa. On the other hand, the undoped CeOSbS2 showed almost the same transport property with the F-doped sample under high pressure. The valence state analysis using X-ray photoelectron spectroscopy revealed a simple valence state of Ce3+ in CeO0.85F0.15SbS2 and mixed valence state between Ce3+ and Ce4+ in undoped CeOSbS2. The valence fluctuation in Ce carried out the comparable transport nature in both samples. A band calculation suggests that the undoped CeOSbS2 could be metallic under high pressure of 30 GPa in accordance with the experimental results. A superior thermoelectric property of power factor in CeOSbS2 was estimated under high pressure around 20 GPa in comparison with that of ambient pressure.
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