Interfacial thermal resistance between metal and dielectric materials is a bottleneck of the thermal management for modern integrated circuits as interface density increases with thinner films. In this work, we have observed that the interfacial resistance across gold and aluminum oxide can be reduced from 4.8 to 1.4 after adding a nickel layer in between, which represents a 70% reduction. The two temperature model is applied to explain the reduction of interfacial resistance, and the results show that the nickel layer functions as a bridge that reduces the phonon mismatch between gold and aluminum oxide. Moreover, nickel has strong electron-phonon coupling, which reduces the thermal resistance caused by the weak electron-phonon coupling in gold.
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28 January 2019
Research Article|
January 25 2019
Reducing interfacial thermal resistance between metal and dielectric materials by a metal interlayer
Xiangyu Li
;
Xiangyu Li
1
Birck Nanotechnology Center, Purdue University
, West Lafayette, Indiana 47907, USA
2
School of Mechanical Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
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Wonjun Park;
Wonjun Park
1
Birck Nanotechnology Center, Purdue University
, West Lafayette, Indiana 47907, USA
3
School of Electrical and Computer Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
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Yan Wang
;
Yan Wang
4
School of Mechanical Engineering, University of Nevada
, Reno, Nevada 89557, USA
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Yong P. Chen;
Yong P. Chen
1
Birck Nanotechnology Center, Purdue University
, West Lafayette, Indiana 47907, USA
3
School of Electrical and Computer Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
5
Department of Physics and Astronomy, Purdue University
, West Lafayette, Indiana 47907, USA
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Xiulin Ruan
Xiulin Ruan
a)
1
Birck Nanotechnology Center, Purdue University
, West Lafayette, Indiana 47907, USA
2
School of Mechanical Engineering, Purdue University
, West Lafayette, Indiana 47907, USA
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a)
Email: [email protected]
J. Appl. Phys. 125, 045302 (2019)
Article history
Received:
October 30 2018
Accepted:
January 07 2019
Citation
Xiangyu Li, Wonjun Park, Yan Wang, Yong P. Chen, Xiulin Ruan; Reducing interfacial thermal resistance between metal and dielectric materials by a metal interlayer. J. Appl. Phys. 28 January 2019; 125 (4): 045302. https://doi.org/10.1063/1.5079428
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