Sn-doped (ITO) nanoparticles with various Sn doping concentrations were successfully fabricated using a liquid phase coprecipitation method. Similar to sputtered ITO thin films, Sn doping reaches a maximum carrier density at 10 at. % in ITO nanoparticles, which was estimated from the bulk plasmon energy based on a scanning ellipsometry (SE) simulation. Interestingly, the X-ray photoelectron emission spectra (XPS) of In 3d core levels show a clear asymmetric peak with a shoulder on the high-binding-energy side for degenerated ITO nanoparticles, which may be associated with the influence of the surface plasmon or plasmonic coupling. Our results suggest that combining the SE simulation and XPS measurements effectively provides a new way to understand the difference between bulk plasmons and surface plasmons for transparent conductive oxide nanoparticles.
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28 June 2019
Research Article|
June 25 2019
Carrier densities of Sn-doped InO nanoparticles and their effect on X-ray photoelectron emission
Junjun Jia
;
Junjun Jia
a)
1
Graduate School of Science and Engineering, Aoyama Gakuin University
, 5-10-1 Fuchinobe, Chuo, Sagamihara 252–5258, Japan
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Ai Takaya;
Ai Takaya
2
Mitsubishi Materials Electronic Chemicals Co., Ltd.
, 3-1-6 Barajima, Akita City, Akita 010-8585, Japan
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Takehiro Yonezawa;
Takehiro Yonezawa
3
Central Research Institute, Mitsubishi Materials Corporation
, 1002-14 Mukohyama, Naka-shi, Ibaraki-Ken 311-0102, Japan
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Kazuhiko Yamasaki;
Kazuhiko Yamasaki
3
Central Research Institute, Mitsubishi Materials Corporation
, 1002-14 Mukohyama, Naka-shi, Ibaraki-Ken 311-0102, Japan
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Hiromi Nakazawa;
Hiromi Nakazawa
3
Central Research Institute, Mitsubishi Materials Corporation
, 1002-14 Mukohyama, Naka-shi, Ibaraki-Ken 311-0102, Japan
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Yuzo Shigesato
Yuzo Shigesato
b)
1
Graduate School of Science and Engineering, Aoyama Gakuin University
, 5-10-1 Fuchinobe, Chuo, Sagamihara 252–5258, Japan
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Junjun Jia
1,a)
Ai Takaya
2
Takehiro Yonezawa
3
Kazuhiko Yamasaki
3
Hiromi Nakazawa
3
Yuzo Shigesato
1,b)
1
Graduate School of Science and Engineering, Aoyama Gakuin University
, 5-10-1 Fuchinobe, Chuo, Sagamihara 252–5258, Japan
2
Mitsubishi Materials Electronic Chemicals Co., Ltd.
, 3-1-6 Barajima, Akita City, Akita 010-8585, Japan
3
Central Research Institute, Mitsubishi Materials Corporation
, 1002-14 Mukohyama, Naka-shi, Ibaraki-Ken 311-0102, Japan
a)
Electronic mail: [email protected]. Present address: Global Center for Science and Engineering (GCSE), Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan.
b)
Electronic mail: [email protected]
J. Appl. Phys. 125, 245303 (2019)
Article history
Received:
March 17 2019
Accepted:
June 02 2019
Citation
Junjun Jia, Ai Takaya, Takehiro Yonezawa, Kazuhiko Yamasaki, Hiromi Nakazawa, Yuzo Shigesato; Carrier densities of Sn-doped InO nanoparticles and their effect on X-ray photoelectron emission. J. Appl. Phys. 28 June 2019; 125 (24): 245303. https://doi.org/10.1063/1.5096364
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