The fabrication of nanostructures of vanadium dioxide ()-based films with critical dimensions down to 100 nm and the characterization of their phase transformation properties are presented. Starting materials are and films that are deposited by magnetron sputtering. For nanofabrication, two top-down processes are investigated, in which the substrate is nanomachined either before or after film deposition. Electrical resistance measurements on bridge nanostructures exhibit a semiconductor–metal transition similar to reference films. A detailed analysis of phase transition temperatures does not reveal any significant width-dependence as it may be expected when approaching the grain size of 100 nm. The absolute electrical resistance in the semiconducting state scales inversely proportional to the width reflecting homogeneous material characteristics. Yet, the resistance change at the semiconductor–metal transition tends to increase for decreasing width indicating reduced carrier scattering as the absolute number of grain boundaries decreases.
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Research Article| June 11 2019
Top-down fabrication and transformation properties of vanadium dioxide nanostructures
S. Rastjoo ;
S. Rastjoo, X. Wang, A. Ludwig, M. Kohl; Top-down fabrication and transformation properties of vanadium dioxide nanostructures. J. Appl. Phys. 14 June 2019; 125 (22): 225104. https://doi.org/10.1063/1.5085322
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