The last missing piece of the puzzle for the full functionalization of group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on the fabrication of GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed by millisecond-range explosive solid phase epitaxy. The n-type single crystalline GeSn alloys are realized by co-implantation of Sn and P into Ge. Both the activation of P and the formation of GeSn are performed during a single-step flash lamp annealing for 3 ms. The bandgap engineering in GeSn as a function of the doping level and Sn concentration is theoretically predicted by density functional theory and experimentally verified using ellipsometric spectroscopy. We demonstrate that both the diffusion and the segregation of Sn and P atoms in Ge are fully suppressed by millisecond-range nonequilibrium thermal processing.
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28 May 2019
Research Article|
May 30 2019
Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
Special Collection:
Highly Mismatched Semiconductors Alloys: from Atoms to Devices
S. Prucnal
;
S. Prucnal
a)
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
a)Author to whom correspondence should be addressed: [email protected]
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Y. Berencén
;
Y. Berencén
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
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M. Wang;
M. Wang
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
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L. Rebohle;
L. Rebohle
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
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R. Kudrawiec;
R. Kudrawiec
2
Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology
, Wybrzeże Wyspiańskiego 27, 50–370 Wrocław, Poland
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M. Polak
;
M. Polak
2
Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology
, Wybrzeże Wyspiańskiego 27, 50–370 Wrocław, Poland
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V. Zviagin;
V. Zviagin
3
Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig Linnéstr. 5
, 04103 Leipzig, Germany
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R. Schmidt-Grund
;
R. Schmidt-Grund
3
Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig Linnéstr. 5
, 04103 Leipzig, Germany
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M. Grundmann
;
M. Grundmann
3
Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig Linnéstr. 5
, 04103 Leipzig, Germany
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J. Grenzer;
J. Grenzer
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
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M. Turek;
M. Turek
4
Maria Curie-Sklodowska University
, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin, Poland
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A. Droździel;
A. Droździel
4
Maria Curie-Sklodowska University
, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin, Poland
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K. Pyszniak;
K. Pyszniak
4
Maria Curie-Sklodowska University
, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin, Poland
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J. Zuk;
J. Zuk
4
Maria Curie-Sklodowska University
, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin, Poland
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M. Helm;
M. Helm
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
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W. Skorupa;
W. Skorupa
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
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S. Zhou
S. Zhou
1
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research
, Bautzner Landstrasse 400, 01328 Dresden, Germany
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a)Author to whom correspondence should be addressed: [email protected]
Note: This paper is part of the Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices.
J. Appl. Phys. 125, 203105 (2019)
Article history
Received:
November 26 2018
Accepted:
May 06 2019
Citation
S. Prucnal, Y. Berencén, M. Wang, L. Rebohle, R. Kudrawiec, M. Polak, V. Zviagin, R. Schmidt-Grund, M. Grundmann, J. Grenzer, M. Turek, A. Droździel, K. Pyszniak, J. Zuk, M. Helm, W. Skorupa, S. Zhou; Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing. J. Appl. Phys. 28 May 2019; 125 (20): 203105. https://doi.org/10.1063/1.5082889
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